Inventor
SAKAI HISAYA
JP17 patents
⚠️ This page may combine multiple inventors who share the name “SAKAI HISAYA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJITSU LTD
5 patentsUS6750541B2Jun 15, 2004
Semiconductor device
FUJITSU LTD47 citations96
US7358180B2Apr 15, 2008
Method of forming wiring structure and semiconductor device
FUJITSU LTD22 citations92
US6992005B2Jan 31, 2006
Semiconductor device and method of manufacturing the same
FUJITSU LTD9 citations74
US7381643B2Jun 3, 2008
Wiring structure forming method and semiconductor device
FUJITSU LTD2 citations62
US6900542B2May 31, 2005
Semiconductor device having increased adhesion between a barrier layer for preventing copper diffusion and a conductive layer, and method of manufacturing the same
FUJITSU LTD0 citations41
FUJITSU SEMICONDUCTOR LTD
5 patentsUS7994055B2Aug 9, 2011
Method of manufacturing semiconductor apparatus, and semiconductor apparatus
FUJITSU SEMICONDUCTOR LTD14 citations84
US8373274B2Feb 12, 2013
Method of forming wiring structure and semiconductor device comprising underlying refractory metal layers
FUJITSU SEMICONDUCTOR LTD3 citations62
US8030207B2Oct 4, 2011
Method of manufacturing a semiconductor device and semiconductor device
FUJITSU SEMICONDUCTOR LTD1 citations62
US7935624B2May 3, 2011
Fabrication method of semiconductor device having a barrier layer containing Mn
FUJITSU SEMICONDUCTOR LTD2 citations62
US7906433B2Mar 15, 2011
Semiconductor device having wirings formed by damascene and its manufacture method
FUJITSU SEMICONDUCTOR LTD0 citations48
SANDISK TECHNOLOGIES LLC
2 patentsUS11152284B1Oct 19, 2021
Three-dimensional memory device with a dielectric isolation spacer and methods of forming the same
SANDISK TECHNOLOGIES LLC7 citations82
US11756877B2Sep 12, 2023
Three-dimensional memory device with via structures surrounded by perforated dielectric moat structure and methods of making the same
SANDISK TECHNOLOGIES LLC0 citations50