P

Inventor

SHIN SANG-WOONG

KR20 patents
⚠️ This page may combine multiple inventors who share the name “SHIN SANG-WOONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

16 patents
US6920080B2Jul 19, 2005

Methods for generating output control signals in synchronous semiconductor memory devices and related semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD22 citations92
US6778465B2Aug 17, 2004

Circuit and method for generating output control signal in synchronous semiconductor memory device

SAMSUNG ELECTRONICS CO LTD18 citations92
US6396310B2May 28, 2002

Current sense amplifiers enabling amplification of bit line voltages provided by bit line sense amplifiers

SAMSUNG ELECTRONICS CO LTD29 citations92
US6005819ADec 21, 1999

Demand-anticipating power control circuits for integrated circuit devices and methods of operation thereof

SAMSUNG ELECTRONICS CO LTD41 citations92
US7855926B2Dec 21, 2010

Semiconductor memory device having local sense amplifier with on/off control

SAMSUNG ELECTRONICS CO LTD9 citations84
US7587645B2Sep 8, 2009

Input circuit of semiconductor memory device and test system having the same

SAMSUNG ELECTRONICS CO LTD12 citations83
US7034590B2Apr 25, 2006

Delay locked loop circuits and methods preventing erroneous transition from coarse lock to fine lock due to noise or jitter

SAMSUNG ELECTRONICS CO LTD15 citations83
US6862250B2Mar 1, 2005

Circuit and method for generating output control signal in synchronous semiconductor memory device

SAMSUNG ELECTRONICS CO LTD13 citations83
US7516384B2Apr 7, 2009

Semiconductor memory testing device and test method using the same

SAMSUNG ELECTRONICS CO LTD13 citations81
US6987407B2Jan 17, 2006

Delay locked loops having delay time compensation and methods for compensating for delay time of the delay locked loops

SAMSUNG ELECTRONICS CO LTD7 citations73
US6708261B1Mar 16, 2004

Multi-stage data buffers having efficient data transfer characteristics and methods of operating same

SAMSUNG ELECTRONICS CO LTD7 citations73
US8374043B2Feb 12, 2013

Sense amplifier and semiconductor memory device using it

SAMSUNG ELECTRONICS CO LTD5 citations72
US7814359B2Oct 12, 2010

High-speed phase-adjusted quadrature data rate (QDR) transceiver and method thereof

SAMSUNG ELECTRONICS CO LTD6 citations63
US7577057B2Aug 18, 2009

Circuit and method for generating write data mask signal in synchronous semiconductor memory device

SAMSUNG ELECTRONICS CO LTD5 citations61
US8873277B2Oct 28, 2014

Semiconductor memory device having balancing capacitors

SAMSUNG ELECTRONICS CO LTD0 citations51
US7280431B2Oct 9, 2007

Method of generating an internal clock for a semiconductor memory device and semiconductor memory device using the same

SAMSUNG ELECTRONICS CO LTD0 citations51

SHIN SANG-WOONG

2 patents

SEO HYEOUNG-WON

1 patent

LEE CHEON-AN

1 patent