Inventor
SHIN SANG-WOONG
KR20 patents
⚠️ This page may combine multiple inventors who share the name “SHIN SANG-WOONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
16 patentsUS6920080B2Jul 19, 2005
Methods for generating output control signals in synchronous semiconductor memory devices and related semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD22 citations92
US6778465B2Aug 17, 2004
Circuit and method for generating output control signal in synchronous semiconductor memory device
SAMSUNG ELECTRONICS CO LTD18 citations92
US6396310B2May 28, 2002
Current sense amplifiers enabling amplification of bit line voltages provided by bit line sense amplifiers
SAMSUNG ELECTRONICS CO LTD29 citations92
US6005819ADec 21, 1999
Demand-anticipating power control circuits for integrated circuit devices and methods of operation thereof
SAMSUNG ELECTRONICS CO LTD41 citations92
US7855926B2Dec 21, 2010
Semiconductor memory device having local sense amplifier with on/off control
SAMSUNG ELECTRONICS CO LTD9 citations84
US7587645B2Sep 8, 2009
Input circuit of semiconductor memory device and test system having the same
SAMSUNG ELECTRONICS CO LTD12 citations83
US7034590B2Apr 25, 2006
Delay locked loop circuits and methods preventing erroneous transition from coarse lock to fine lock due to noise or jitter
SAMSUNG ELECTRONICS CO LTD15 citations83
US6862250B2Mar 1, 2005
Circuit and method for generating output control signal in synchronous semiconductor memory device
SAMSUNG ELECTRONICS CO LTD13 citations83
US7516384B2Apr 7, 2009
Semiconductor memory testing device and test method using the same
SAMSUNG ELECTRONICS CO LTD13 citations81
US6987407B2Jan 17, 2006
Delay locked loops having delay time compensation and methods for compensating for delay time of the delay locked loops
SAMSUNG ELECTRONICS CO LTD7 citations73
US6708261B1Mar 16, 2004
Multi-stage data buffers having efficient data transfer characteristics and methods of operating same
SAMSUNG ELECTRONICS CO LTD7 citations73
US8374043B2Feb 12, 2013
Sense amplifier and semiconductor memory device using it
SAMSUNG ELECTRONICS CO LTD5 citations72
US7814359B2Oct 12, 2010
High-speed phase-adjusted quadrature data rate (QDR) transceiver and method thereof
SAMSUNG ELECTRONICS CO LTD6 citations63
US7577057B2Aug 18, 2009
Circuit and method for generating write data mask signal in synchronous semiconductor memory device
SAMSUNG ELECTRONICS CO LTD5 citations61
US8873277B2Oct 28, 2014
Semiconductor memory device having balancing capacitors
SAMSUNG ELECTRONICS CO LTD0 citations51
US7280431B2Oct 9, 2007
Method of generating an internal clock for a semiconductor memory device and semiconductor memory device using the same
SAMSUNG ELECTRONICS CO LTD0 citations51
SHIN SANG-WOONG
2 patentsUS8514610B2Aug 20, 2013
Semiconductor memory cell array including dummy bit-line and word-line and semiconductor memory device having the same
SHIN SANG-WOONG4 citations60
US8295114B2Oct 23, 2012
Semiconductor memory cell array including dummy bit-line and word-line and semiconductor memory device having the same
SHIN SANG-WOONG2 citations60