Inventor

JAIN VIBHOR

US191 patents

⚠️ This page may combine multiple inventors who share the name “JAIN VIBHOR”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

JAIN VIBHOR

GLOBALFOUNDRIES INC

Optical switches and routers operated by phase-changing materials controlled by heaters

Profile control over a collector of a bipolar junction transistor

Optical through silicon via

Fabrication of integrated circuit structures for bipolor transistors

Heterojunction bipolar transistor with stress component

Bipolar junction transistors with a buried dielectric region in the active device region

Embedding semiconductor devices in silicon-on-insulator wafers connected using through silicon vias

Structures with an airgap and methods of forming such structures

Heterojunction bipolar transistor with emitter base junction oxide interface

Heterojunction bipolar transistors having bases with different elevations

Optical beam steering with directionality provided by switched grating couplers

Lateral PiN diodes and schottky diodes

Device structures for a silicon-on-insulator substrate with a high-resistance handle wafer

Compact device structures for a bipolar junction transistor

Heterojunction bipolar transistors with a controlled undercut formed beneath the extrinsic base

Transistor with an airgap for reduced base-emitter capacitance and method of forming the transistor

Transistor with improved channel mobility

Heterojunction bipolar transistor with a thickened extrinsic base

Bipolar junction transistors with a combined vertical-lateral architecture

Bipolar junction transistors with an air gap in the shallow trench isolation

Implementing stress in a bipolar junction transistor

Integration of heterojunction bipolar transistors with different base profiles

Profile control over a collector of a bipolar junction transistor

Bipolar junction transistors with an air gap in the shallow trench isolation

Bipolar junction transistors with a self-aligned emitter and base

GLOBALFOUNDRIES US INC

Heterojunction bipolar transistor with buried trap rich isolation region

Heterojunction bipolar transistor with buried trap rich isolation region

Thermally and electrically conductive interconnects

Trap-rich layer in a high-resistivity semiconductor layer

Photodetector with reflector with air gap adjacent photodetecting region

Heterojunction bipolar transistor

Heterojunction bipolar transistors with one or more sealed airgap

Heterojunction bipolar transistors with airgap isolation

Photodiodes integrated into a BiCMOS process

Silicon photonic components fabricated using a bulk substrate

Photodiode and/or PIN diode structures

Active attack prevention for secure integrated circuits using latchup sensitive diode circuit

Active x-ray attack prevention device

IBM

Field plate in heterojunction bipolar transistor with improved break-down voltage

Tunable breakdown voltage RF FET devices

Heterojunction bipolar transistors with an airgap between the extrinsic base and collector

Heterojunction bipolar transistors with reduced parasitic capacitance

Bipolar device having a monocrystalline semiconductor intrinsic base to extrinsic base link-up region

Multilevel waveguide structure

Semiconductor device and method of forming the device by forming monocrystalline semiconductor layers on a dielectric layer over isolation regions

Self-aligned emitter-base-collector bipolar junction transistors with a single crystal raised extrinsic base

GLOBALFOUNDARIES INC

Heterojunction bipolar transistor with improved performance and breakdown voltage

SPOTIFY AB

System and method for semantic analysis of song lyrics in a media content environment

GOOGLE LLC

Facilitating end-to-end communications with automated assistants in multiple languages

GLOBALFOUNDRIES SG PTE LTD

Heat sink for face bonded semiconductor device