Inventor

KULA WITOLD

US101 patents

⚠️ This page may combine multiple inventors who share the name “KULA WITOLD”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KULA WITOLD

MICRON TECHNOLOGY INC

Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems

Methods of forming semiconductor devices including tunnel barrier materials

Magnetic tunnel junctions

Memory cells, methods of fabrication, semiconductor device structures, memory systems, and electronic systems

Magnetic memory cells and methods of formation

Memory cells, methods of operation and fabrication, semiconductor device structures, and memory systems

Semiconductor devices with magnetic and attracter materials and methods of fabrication

Semiconductor devices with magnetic regions and attracter material and methods of fabrication

Memory cells, methods of fabrication, and semiconductor devices

Memory cells, methods of fabrication, semiconductor device structures, and memory systems

Transistors comprising two-dimensional materials and related semiconductor devices, systems, and methods

Magnetic memory cell structures, arrays, and semiconductor devices

Magnetic structures, semiconductor structures, and semiconductor devices

MAGIC TECHNOLOGIES INC

High performance MTJ element for STT-RAM and method for making the same

High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same

Method of MRAM fabrication with zero electrical shorting

Composite hard mask for the etching of nanometer size magnetic multilayer based device

Method of double patterning and etching magnetic tunnel junction structures for spin-transfer torque MRAM devices

High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same

Hafnium doped cap and free layer for MRAM device

Field angle sensor fabricated using reactive ion etching

HORNG CHENG T

Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM

High performance MTJ element for STT-RAM and method for making the same

Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application

High performance MTJ elements for STT-RAM and method for making the same

High performance MTJ element for STT-RAM and method for making the same

JAN GUENOLE

Magnetic element with improved out-of-plane anisotropy for spintronic applications

Multilayers having reduced perpendicular demagnetizing field using moment dilution for spintronic applications

Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications

Multilayers having reduced perpendicular demagnetizing field using moment dilution for spintronic applications

HEADWAY TECH INC

Method of making a high thermal stability reference structure with out-of-plane anisotropy for magnetic device applications

High thermal stability reference structure with out-of-plane anisotropy for magnetic device applications

Magnetic tunnel junction for MRAM applications

WANG YU-JEN

Free layer with high thermal stability for magnetic device applications by insertion of a boron dusting layer

High thermal stability free layer with high out-of-plane anisotropy for magnetic device applications

High thermal stability reference structure with out-of-plane aniotropy to magnetic device applications

CAO WEI

Magnetic tunnel junction for MRAM applications

Magnetic tunnel junction for MRAM applications

Composite free layer within magnetic tunnel junction for MRAM applications

KULA WITOLD

Memory cells, semiconductor device structures, memory systems, and methods of fabrication

Storage element for STT MRAM applications

MTJ element for STT MRAM

SILICON MAGNETIC SYSTEMS

Methods for fabricating magnetic cell junctions and a structure resulting and/or used for such methods

Method for oxidizing a metal layer

BELEN RODOLFO

Composite hard mask with upper sacrificial dielectric layer for the patterning and etching of nanometer size MRAM devices

HEADWAY TECHNOLOGIES INC

Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications

BEACH ROBERT

STT-MRAM reference layer having substantially reduced stray field and consisting of a single magnetic domain

XIAO RONGFU

Bottom electrode for MRAM device

SANDHU GURTEJ S

Methods of forming magnetic memory cells

HITACHI GLOBAL STORAGE TECH

Underlayer for high amplitude spin valve sensors