Inventor
Pan zheng yang
TW37 patents
Patents
37 patentsUS10879126B2Dec 29, 2020
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10535736B2Jan 14, 2020
Fully strained channel
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10269646B2Apr 23, 2019
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10164100B2Dec 25, 2018
Formation method and structure semiconductor device with source/drain structures
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9899273B1Feb 20, 2018
Semiconductor structure with dopants diffuse protection and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD13 citations84
US9847334B1Dec 19, 2017
Structure and formation method of semiconductor device with channel layer
TAIWAN SEMICONDUCTOR MFG CO LTD17 citations84
US11233123B2Jan 25, 2022
Fully strained channel
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11011433B2May 18, 2021
NMOS and PMOS transistor gates with hafnium oxide layers and lanthanum oxide layers
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10879396B2Dec 29, 2020
Semiconductor device with source/drain structures
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10867799B2Dec 15, 2020
FinFET device and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10672886B2Jun 2, 2020
Structure and method for high-k metal gate
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10629496B2Apr 21, 2020
Methods for forming transistor gates with hafnium oxide layers and lanthanum oxide layers
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10490661B2Nov 26, 2019
Dopant concentration boost in epitaxially formed material
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10026840B2Jul 17, 2018
Structure of semiconductor device with source/drain structures
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11901442B2Feb 13, 2024
Method of manufacturing a semiconductor device and a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12080761B2Sep 3, 2024
Fully strained channel
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11171220B2Nov 9, 2021
Structure and method for high-K metal gate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11776851B2Oct 3, 2023
Semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11721760B2Aug 8, 2023
Dopant concentration boost in epitaxially formed material
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11646231B2May 9, 2023
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11342228B2May 24, 2022
Semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10734524B2Aug 4, 2020
Semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US10347764B2Jul 9, 2019
Semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11677015B2Jun 13, 2023
Method of manufacturing a semiconductor device and a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12308369B2May 20, 2025
Method of manufacturing a semiconductor device and a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12057351B2Aug 6, 2024
Semiconductor device and methods of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12581721B2Mar 17, 2026
Method for gap filling with selectively formed seed layer and heteroepitaxial cap layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations58
US12107015B2Oct 1, 2024
NMOS and PMOS transistor gates with hafnium oxide layers and lanthanum oxide layers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US11152362B2Oct 19, 2021
Fin field effect transistor (FinFET) device structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10879240B2Dec 29, 2020
Fin field effect transistor (FinFET) device structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10879124B2Dec 29, 2020
Method to form a fully strained channel region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10636909B2Apr 28, 2020
Formation method of semiconductor device with source/drain structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10522358B2Dec 31, 2019
FinFET device and methods of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10043665B2Aug 7, 2018
Formation method of semiconductor device structure with semiconductor nanowire
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9917189B2Mar 13, 2018
Method for detecting presence and location of defects in a substrate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12266573B2Apr 1, 2025
Transistor isolation regions and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations47
US9721826B1Aug 1, 2017
Wafer supporting structure, and device and method for manufacturing semiconductor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations45