Inventor
TSAO CHIH-PIN
TW33 patents
⚠️ This page may combine multiple inventors who share the name “TSAO CHIH-PIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
32 patentsUS10153351B2Dec 11, 2018
Semiconductor device and a method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD14 citations92
US10115808B2Oct 30, 2018
finFET device and methods of forming
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9831345B2Nov 28, 2017
FinFET with rounded source/drain profile
TAIWAN SEMICONDUCTOR MFG CO LTD13 citations84
US10109507B2Oct 23, 2018
Fluorine contamination control in semiconductor manufacturing process
TAIWAN SEMICONDUCTOR MFG CO LTD13 citations83
US11450757B2Sep 20, 2022
FinFET device and methods of forming
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11211477B2Dec 28, 2021
FinFETs having epitaxial capping layer on fin and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10770570B2Sep 8, 2020
FinFET device and methods of forming
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10714586B2Jul 14, 2020
Semiconductor device and a method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10388792B2Aug 20, 2019
FinFET with rounded source/drain profile
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10109742B2Oct 23, 2018
Semiconductor device including fin structures and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US11948800B2Apr 2, 2024
Semiconductor device having work function metal stack
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10163626B2Dec 25, 2018
Metal gate structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US9947658B2Apr 17, 2018
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12334349B2Jun 17, 2025
Semiconductor device having work function metal stack
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11823908B2Nov 21, 2023
Semiconductor device having work function metal stack
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11776911B2Oct 3, 2023
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11569362B2Jan 31, 2023
Semiconductor device and a method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11201059B2Dec 14, 2021
Device having work function metal stack and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11024582B2Jun 1, 2021
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11107810B2Aug 31, 2021
Fin field effect transistor (FinFET) device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10276568B2Apr 30, 2019
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US12520559B2Jan 6, 2026
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations57
US12477807B2Nov 18, 2025
Semiconductor device and a method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10861975B2Dec 8, 2020
FinFET with rounded source/drain profile
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10797164B2Oct 6, 2020
FinFETs having epitaxial capping layer on fin and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9520502B2Dec 13, 2016
FinFETs having epitaxial capping layer on fin and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9502253B2Nov 22, 2016
Method of manufacturing an integrated circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10497571B2Dec 3, 2019
Device having work function metal stack and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10262878B2Apr 16, 2019
Fluorine contamination control in semiconductor manufacturing process
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9922976B1Mar 20, 2018
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations51
US9831242B2Nov 28, 2017
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10157844B2Dec 18, 2018
FinFET device having oxide layer among interlayer dielectric layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations47