Inventor
KIM SANGSU
KR22 patents
⚠️ This page may combine multiple inventors who share the name “KIM SANGSU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
17 patentsUS9466601B2Oct 11, 2016
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD14 citations92
US9362397B2Jun 7, 2016
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD11 citations82
US9287401B2Mar 15, 2016
Semiconductor device having fin-type field effect transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD11 citations82
US11233122B2Jan 25, 2022
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD4 citations72
US10418448B2Sep 17, 2019
Semiconductor devices including field effect transistors and methods of forming the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US10177150B2Jan 8, 2019
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US9711506B2Jul 18, 2017
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations72
US11195822B2Dec 7, 2021
Light-emitting package and display device including the same
SAMSUNG ELECTRONICS CO LTD2 citations64
US11195928B2Dec 7, 2021
Semiconductor devices including a gate isolation structure and a gate capping layer including different materials from each other
SAMSUNG ELECTRONICS CO LTD2 citations63
US9679975B2Jun 13, 2017
Semiconductor devices including field effect transistors and methods of forming the same
SAMSUNG ELECTRONICS CO LTD1 citations62
US11695041B2Jul 4, 2023
Method of manufacturing a semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations61
US9825034B2Nov 21, 2017
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US9536950B2Jan 3, 2017
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US12183796B2Dec 31, 2024
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations51
US10868125B2Dec 15, 2020
Semiconductor devices including field effect transistors and methods of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US9502531B2Nov 22, 2016
Semiconductor device having fin-type field effect transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US10186460B2Jan 22, 2019
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD0 citations31