Inventor
EIKYU KATSUMI
JP23 patents
⚠️ This page may combine multiple inventors who share the name “EIKYU KATSUMI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RENESAS ELECTRONICS CORP
15 patentsUS10121894B2Nov 6, 2018
Semiconductor device and method of manufacturing the same
RENESAS ELECTRONICS CORP2 citations73
US9755094B2Sep 5, 2017
Imaging device
RENESAS ELECTRONICS CORP3 citations73
US11876127B2Jan 16, 2024
Semiconductor device and method of manufacturing the same
RENESAS ELECTRONICS CORP0 citations62
US11646376B2May 9, 2023
Semiconductor device and method of manufacturing the same
RENESAS ELECTRONICS CORP0 citations62
US11362207B2Jun 14, 2022
Semiconductor device
RENESAS ELECTRONICS CORP1 citations57
US12159934B2Dec 3, 2024
Semiconductor device
RENESAS ELECTRONICS CORP0 citations51
US12125905B2Oct 22, 2024
Semiconductor device
RENESAS ELECTRONICS CORP0 citations51
US11557648B2Jan 17, 2023
Semiconductor device and method of manufacturing the same
RENESAS ELECTRONICS CORP0 citations51
US11527632B2Dec 13, 2022
Semiconductor device and method of manufacturing the same
RENESAS ELECTRONICS CORP0 citations51
US12563771B2Feb 24, 2026
Semiconductor device and method of manufacturing the same
RENESAS ELECTRONICS CORP0 citations47
US12402368B2Aug 26, 2025
Semiconductor device and method of manufacturing the same
RENESAS ELECTRONICS CORP0 citations47
US9437644B2Sep 6, 2016
Semiconductor device and method of manufacturing same
RENESAS ELECTRONICS CORP0 citations47
US12557336B2Feb 17, 2026
Semiconductor device and method of manufacturing the same
RENESAS ELECTRONICS CORP0 citations45
US10923422B2Feb 16, 2021
Semiconductor device
RENESAS ELECTRONICS CORP0 citations45
US10861786B2Dec 8, 2020
Semiconductor device having a multilayer structure
RENESAS ELECTRONICS CORP0 citations41
MITSUBISHI ELECTRIC CORP
6 patentsUS6950369B2Sep 27, 2005
Magnetic memory device capable of passing bidirectional currents through the bit lines
MITSUBISHI ELECTRIC CORP71 citations98
US6567299B2May 20, 2003
Magnetic memory device and magnetic substrate
MITSUBISHI ELECTRIC CORP83 citations98
US6741495B2May 25, 2004
Magnetic memory device and magnetic substrate
MITSUBISHI ELECTRIC CORP41 citations96
US6576965B2Jun 10, 2003
Semiconductor device with lightly doped drain layer
MITSUBISHI ELECTRIC CORP21 citations92
US5845105ADec 1, 1998
Method of simulating semiconductor manufacture with process functions according to user application
MITSUBISHI ELECTRIC CORP12 citations73
US6461946B2Oct 8, 2002
Method of manufacturing semiconductor device
MITSUBISHI ELECTRIC CORP3 citations61