Inventor
YANAGIGAWA HIROSHI
JP20 patents
⚠️ This page may combine multiple inventors who share the name “YANAGIGAWA HIROSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RENESAS ELECTRONICS CORP
12 patentsUS10250255B2Apr 2, 2019
Semiconductor device and circuit arrangement using the same
RENESAS ELECTRONICS CORP2 citations72
US10529846B2Jan 7, 2020
Semiconductor device and method of manufacturing the same
RENESAS ELECTRONICS CORP1 citations60
US11362207B2Jun 14, 2022
Semiconductor device
RENESAS ELECTRONICS CORP1 citations57
US12394759B2Aug 19, 2025
Semiconductor device and circuit device
RENESAS ELECTRONICS CORP0 citations52
US12125905B2Oct 22, 2024
Semiconductor device
RENESAS ELECTRONICS CORP0 citations51
US11557648B2Jan 17, 2023
Semiconductor device and method of manufacturing the same
RENESAS ELECTRONICS CORP0 citations51
US11004749B2May 11, 2021
Semiconductor device and method of manufacturing the same
RENESAS ELECTRONICS CORP0 citations50
US12563771B2Feb 24, 2026
Semiconductor device and method of manufacturing the same
RENESAS ELECTRONICS CORP0 citations47
US10763336B2Sep 1, 2020
Semiconductor device and method for manufacturing the same
RENESAS ELECTRONICS CORP0 citations41
US9698773B2Jul 4, 2017
Semiconductor device
RENESAS ELECTRONICS CORP0 citations41
US7884421B2Feb 8, 2011
Semiconductor device and method of manufacturing the same
RENESAS ELECTRONICS CORP0 citations41
US9960269B2May 1, 2018
Semiconductor device and method of manufacturing the same
RENESAS ELECTRONICS CORP0 citations39
NEC CORP
5 patentsUS6384453B1May 7, 2002
High withstand voltage diode and method for manufacturing same
NEC CORP20 citations92
US5596216AJan 21, 1997
Semiconductor device with diode and capable of device protection
NEC CORP8 citations73
US6002158ADec 14, 1999
High breakdown-voltage diode with electric-field relaxation region
NEC CORP4 citations62
US5767556AJun 16, 1998
Field effect transistor
NEC CORP5 citations62
US5523601AJun 4, 1996
High-breakdown-voltage MOS transistor
NEC CORP6 citations62
NEC ELECTRONICS CORP
3 patentsUS7400163B2Jul 15, 2008
Dead time control circuit capable of adjusting temperature characteristics of dead time
NEC ELECTRONICS CORP17 citations83
US7439795B2Oct 21, 2008
Charge pump circuit with reduced parasitic capacitance
NEC ELECTRONICS CORP9 citations81
US7733133B2Jun 8, 2010
Power switch circuit having variable resistor coupled between input terminal and output transistor and changing its resistance based on state of output transistor
NEC ELECTRONICS CORP0 citations51