Inventor
TSAI CURTIS
US30 patents
⚠️ This page may combine multiple inventors who share the name “TSAI CURTIS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTEL CORP
22 patentsUS10096599B2Oct 9, 2018
Methods of integrating multiple gate dielectric transistors on a tri-gate (finFET) process
INTEL CORP7 citations84
US9972642B2May 15, 2018
High voltage three-dimensional devices having dielectric liners
INTEL CORP5 citations84
US9786783B2Oct 10, 2017
Transistor architecture having extended recessed spacer and source/drain regions and method of making same
INTEL CORP16 citations84
US9748252B2Aug 29, 2017
Antifuse element utilizing non-planar topology
INTEL CORP3 citations73
US10229866B2Mar 12, 2019
On-chip through-body-via capacitors and techniques for forming same
INTEL CORP4 citations72
US9520494B2Dec 13, 2016
Vertical non-planar semiconductor device for system-on-chip (SoC) applications
INTEL CORP2 citations63
US12520578B2Jan 6, 2026
Methods of integrating multiple gate dielectric transistors on a tri-gate (finfet) process
INTEL CORP0 citations62
US12136628B2Nov 5, 2024
High voltage three-dimensional devices having dielectric liners
INTEL CORP0 citations62
US11881486B2Jan 23, 2024
High voltage three-dimensional devices having dielectric liners
INTEL CORP0 citations62
US11695008B2Jul 4, 2023
Methods of integrating multiple gate dielectric transistors on a tri-gate (FINFET) process
INTEL CORP0 citations62
US11610917B2Mar 21, 2023
High voltage three-dimensional devices having dielectric liners
INTEL CORP0 citations62
US11251201B2Feb 15, 2022
High voltage three-dimensional devices having dielectric liners
INTEL CORP0 citations62
US12166031B2Dec 10, 2024
Substrate-less electrostatic discharge (ESD) integrated circuit structures
INTEL CORP1 citations61
US10505034B2Dec 10, 2019
Vertical transistor using a through silicon via gate
INTEL CORP1 citations61
US12317590B2May 27, 2025
Substrate-free integrated circuit structures
INTEL CORP0 citations60
US12471354B2Nov 11, 2025
Dipole threshold voltage tuning for high voltage transistor stacks
INTEL CORP1 citations58
US10847544B2Nov 24, 2020
High voltage three-dimensional devices having dielectric liners
INTEL CORP0 citations52
US10692888B2Jun 23, 2020
High voltage three-dimensional devices having dielectric liners
INTEL CORP0 citations52
US10263112B2Apr 16, 2019
Vertical non-planar semiconductor device for system-on-chip (SoC) applications
INTEL CORP0 citations52
US9806095B2Oct 31, 2017
High voltage three-dimensional devices having dielectric liners
INTEL CORP0 citations52
US9741721B2Aug 22, 2017
Low leakage non-planar access transistor for embedded dynamic random access memory (eDRAM)
INTEL CORP1 citations52
US12568643B2Mar 3, 2026
Nanowire transistors and methods of fabrication
INTEL CORP0 citations48
HAFEZ WALID M
3 patentsUS9159734B2Oct 13, 2015
Antifuse element utilizing non-planar topology
HAFEZ WALID M21 citations92
US8981481B2Mar 17, 2015
High voltage three-dimensional devices having dielectric liners
HAFEZ WALID M12 citations92
US9570467B2Feb 14, 2017
High voltage three-dimensional devices having dielectric liners
HAFEZ WALID M3 citations83