P

Inventor

TSAI CURTIS

US30 patents
⚠️ This page may combine multiple inventors who share the name “TSAI CURTIS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INTEL CORP

22 patents
US10096599B2Oct 9, 2018

Methods of integrating multiple gate dielectric transistors on a tri-gate (finFET) process

INTEL CORP7 citations84
US9972642B2May 15, 2018

High voltage three-dimensional devices having dielectric liners

INTEL CORP5 citations84
US9786783B2Oct 10, 2017

Transistor architecture having extended recessed spacer and source/drain regions and method of making same

INTEL CORP16 citations84
US9748252B2Aug 29, 2017

Antifuse element utilizing non-planar topology

INTEL CORP3 citations73
US10229866B2Mar 12, 2019

On-chip through-body-via capacitors and techniques for forming same

INTEL CORP4 citations72
US9520494B2Dec 13, 2016

Vertical non-planar semiconductor device for system-on-chip (SoC) applications

INTEL CORP2 citations63
US12520578B2Jan 6, 2026

Methods of integrating multiple gate dielectric transistors on a tri-gate (finfet) process

INTEL CORP0 citations62
US12136628B2Nov 5, 2024

High voltage three-dimensional devices having dielectric liners

INTEL CORP0 citations62
US11881486B2Jan 23, 2024

High voltage three-dimensional devices having dielectric liners

INTEL CORP0 citations62
US11695008B2Jul 4, 2023

Methods of integrating multiple gate dielectric transistors on a tri-gate (FINFET) process

INTEL CORP0 citations62
US11610917B2Mar 21, 2023

High voltage three-dimensional devices having dielectric liners

INTEL CORP0 citations62
US11251201B2Feb 15, 2022

High voltage three-dimensional devices having dielectric liners

INTEL CORP0 citations62
US12166031B2Dec 10, 2024

Substrate-less electrostatic discharge (ESD) integrated circuit structures

INTEL CORP1 citations61
US10505034B2Dec 10, 2019

Vertical transistor using a through silicon via gate

INTEL CORP1 citations61
US12317590B2May 27, 2025

Substrate-free integrated circuit structures

INTEL CORP0 citations60
US12471354B2Nov 11, 2025

Dipole threshold voltage tuning for high voltage transistor stacks

INTEL CORP1 citations58
US10847544B2Nov 24, 2020

High voltage three-dimensional devices having dielectric liners

INTEL CORP0 citations52
US10692888B2Jun 23, 2020

High voltage three-dimensional devices having dielectric liners

INTEL CORP0 citations52
US10263112B2Apr 16, 2019

Vertical non-planar semiconductor device for system-on-chip (SoC) applications

INTEL CORP0 citations52
US9806095B2Oct 31, 2017

High voltage three-dimensional devices having dielectric liners

INTEL CORP0 citations52
US9741721B2Aug 22, 2017

Low leakage non-planar access transistor for embedded dynamic random access memory (eDRAM)

INTEL CORP1 citations52
US12568643B2Mar 3, 2026

Nanowire transistors and methods of fabrication

INTEL CORP0 citations48

HAFEZ WALID M

3 patents

YEH JENG-YA D

2 patents

ANALOG DEVICES INC

1 patent

TSAI CURTIS

1 patent

JAN CHIA-HONG

1 patent