Inventor
ROIG-GUITART JAUME
BE31 patents
⚠️ This page may combine multiple inventors who share the name “ROIG-GUITART JAUME”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SEMICONDUCTOR COMPONENTS IND LLC
23 patentsUS10218350B2Feb 26, 2019
Circuit with transistors having coupled gates
SEMICONDUCTOR COMPONENTS IND LLC2 citations73
US9543291B2Jan 10, 2017
Method of forming a high electron mobility semiconductor device and structure therefor
SEMICONDUCTOR COMPONENTS IND LLC2 citations73
US10770455B2Sep 8, 2020
Electronic device including a transistor and a variable capacitor
SEMICONDUCTOR COMPONENTS IND LLC2 citations72
US10545055B2Jan 28, 2020
Electronic device including a temperature sensor
SEMICONDUCTOR COMPONENTS IND LLC2 citations71
US10504884B2Dec 10, 2019
Electronic device and circuit including a transistor and a variable resistor
SEMICONDUCTOR COMPONENTS IND LLC2 citations71
US10937781B1Mar 2, 2021
Electronic device including a protection circuit
SEMICONDUCTOR COMPONENTS IND LLC6 citations67
US11108390B2Aug 31, 2021
Method of forming a semiconductor device and circuit therefor
SEMICONDUCTOR COMPONENTS IND LLC4 citations66
US12556175B2Feb 17, 2026
Driving signal-based reduction of gate switching instability for semiconductor power switch
SEMICONDUCTOR COMPONENTS IND LLC0 citations62
US12549103B2Feb 10, 2026
Power transistors with resonant clamping circuits
SEMICONDUCTOR COMPONENTS IND LLC0 citations62
US11600611B2Mar 7, 2023
Electronic device including high electron mobility transistors and a resistor and a method of using the same
SEMICONDUCTOR COMPONENTS IND LLC0 citations62
US11018129B2May 25, 2021
Circuit that changes voltage of back electrode of transistor based on error condition
SEMICONDUCTOR COMPONENTS IND LLC0 citations62
US10418439B2Sep 17, 2019
Method of forming a semiconductor device termination and structure therefor
SEMICONDUCTOR COMPONENTS IND LLC1 citations62
US11444090B2Sep 13, 2022
Semiconductor device having a programming element
SEMICONDUCTOR COMPONENTS IND LLC1 citations61
US9929261B2Mar 27, 2018
Electronic device including a HEMT with a segmented gate electrode
SEMICONDUCTOR COMPONENTS IND LLC0 citations51
US9412811B2Aug 9, 2016
Semiconductor device having localized charge balance structure and method
SEMICONDUCTOR COMPONENTS IND LLC0 citations51
US9991776B2Jun 5, 2018
Switched mode power supply converter
SEMICONDUCTOR COMPONENTS IND LLC1 citations50
US11152497B2Oct 19, 2021
Variable resistance to reduce gate votlage oscillations in gallium nitride transistors
SEMICONDUCTOR COMPONENTS IND LLC0 citations48
US9780086B2Oct 3, 2017
Field-effect transistor with integrated Schottky contact
SEMICONDUCTOR COMPONENTS IND LLC1 citations48
US12068408B2Aug 20, 2024
High electron mobility transistor
SEMICONDUCTOR COMPONENTS IND LLC0 citations47
US11817478B2Nov 14, 2023
Termination structures with reduced dynamic output capacitance loss
SEMICONDUCTOR COMPONENTS IND LLC0 citations47
US10090380B2Oct 2, 2018
Semiconductor device having localized charge balance structure and method
SEMICONDUCTOR COMPONENTS IND LLC0 citations47
US9413348B2Aug 9, 2016
Electronic circuit including a switch having an associated breakdown voltage and a method of using the same
SEMICONDUCTOR COMPONENTS IND LLC1 citations44
US10147785B2Dec 4, 2018
High-voltage superjunction field effect transistor
SEMICONDUCTOR COMPONENTS IND LLC0 citations39
SEMICONDUCTOR COMPONENTS IND
5 patentsUS9343528B2May 17, 2016
Process of forming an electronic device having a termination region including an insulating region
SEMICONDUCTOR COMPONENTS IND6 citations73
US9219138B2Dec 22, 2015
Semiconductor device having localized charge balance structure and method
SEMICONDUCTOR COMPONENTS IND5 citations72
US9287371B2Mar 15, 2016
Semiconductor device having localized charge balance structure and method
SEMICONDUCTOR COMPONENTS IND5 citations68
US9324784B2Apr 26, 2016
Electronic device having a termination region including an insulating region
SEMICONDUCTOR COMPONENTS IND2 citations63
US9269789B2Feb 23, 2016
Method of forming a high electron mobility semiconductor device and structure therefor
SEMICONDUCTOR COMPONENTS IND2 citations62
ROIG-GUITART JAUME
3 patentsUS8648398B2Feb 11, 2014
Electronic device and a transistor including a trench and a sidewall doped region
ROIG-GUITART JAUME0 citations48
US8298889B2Oct 30, 2012
Process of forming an electronic device including a trench and a conductive structure therein
ROIG-GUITART JAUME1 citations48
US8299528B2Oct 30, 2012
Transistor and method thereof
ROIG-GUITART JAUME0 citations39