Inventor
TAKEMOTO TOYOKI
16 patents
⚠️ This page may combine multiple inventors who share the name “TAKEMOTO TOYOKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD
15 patentsUS4826780AMay 2, 1989
Method of making bipolar transistors
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD79 citations96
US4685198AAug 11, 1987
Method of manufacturing isolated semiconductor devices
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD81 citations96
US5066602ANov 19, 1991
Method of making semiconductor ic including polar transistors
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD36 citations92
US4814287AMar 21, 1989
Method of manufacturing a semiconductor integrated circuit device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD37 citations92
US4563227AJan 7, 1986
Method for manufacturing a semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD26 citations92
US4496935AJan 29, 1985
Analog-digital converter with linear characteristic restoration circuit
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD27 citations92
US4484211ANov 20, 1984
Oxide walled emitter
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD32 citations92
US4417233ANov 22, 1983
Fully parallel threshold type analog-to-digital converter
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD39 citations92
US4233615ANov 11, 1980
Semiconductor integrated circuit device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD42 citations92
US4441198AApr 3, 1984
Shift register circuit
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD18 citations74
US3945347AMar 23, 1976
Method of making integrated circuits
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD11 citations74
US4459496AJul 10, 1984
Semiconductor integrated circuit having stacked integrated injection logic circuits
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD9 citations73
US5661066AAug 26, 1997
Semiconductor integrated circuit
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD5 citations62
US4201106AMay 6, 1980
Electronic musical instrument
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD3 citations62
US4563807AJan 14, 1986
Method for making semiconductor device utilizing molecular beam epitaxy to form the emitter layers
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD6 citations60