P

Inventor

MAEDA MAMORU

JP19 patents
⚠️ This page may combine multiple inventors who share the name “MAEDA MAMORU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

FUJITSU LTD

13 patents
US4625678ADec 2, 1986

Apparatus for plasma chemical vapor deposition

FUJITSU LTD272 citations98
US5148259ASep 15, 1992

Semiconductor device having thin film wiring layer of aluminum containing carbon

FUJITSU LTD59 citations96
US4394401AJul 19, 1983

Method of plasma enhanced chemical vapor deposition of phosphosilicate glass film

FUJITSU LTD77 citations96
US4804560AFeb 14, 1989

Method of selectively depositing tungsten upon a semiconductor substrate

FUJITSU LTD125 citations94
US5518937AMay 21, 1996

Semiconductor device having a region doped to a level exceeding the solubility limit

FUJITSU LTD26 citations92
US5270224ADec 14, 1993

Method of manufacturing a semiconductor device having a region doped to a level exceeding the solubility limit

FUJITSU LTD41 citations92
US5111266AMay 5, 1992

Semiconductor device having a region doped to a level exceeding the solubility limit

FUJITSU LTD38 citations92
US4363868ADec 14, 1982

Process of producing semiconductor devices by forming a silicon oxynitride layer by a plasma CVD technique which is employed in a selective oxidation process

FUJITSU LTD32 citations92
US4293590AOct 6, 1981

Process for high pressure oxidation of silicon

FUJITSU LTD23 citations82
US4275094AJun 23, 1981

Process for high pressure oxidation of silicon

FUJITSU LTD14 citations82
US4263087AApr 21, 1981

Process for producing epitaxial layers

FUJITSU LTD22 citations79
US4293589AOct 6, 1981

Process for high pressure oxidation of silicon

FUJITSU LTD10 citations73
US4513026AApr 23, 1985

Method for coating a semiconductor device with a phosphosilicate glass

FUJITSU LTD15 citations72

RICOH KK

6 patents