P

Inventor

OIKAWA SABURO

JP15 patents

Patents

15 patents
US6226059B1May 1, 2001

Active matrix display device using aluminum alloy in scanning signal line or video signal line

HITACHI LTD45 citations96
US5153702AOct 6, 1992

Thin film semiconductor device and method for fabricating the same

HITACHI LTD81 citations94
US5781255AJul 14, 1998

Active matrix display device using aluminum alloy in scanning signal line or video signal line

HITACHI LTD25 citations92
US4514747AApr 30, 1985

Field controlled thyristor with double-diffused source region

HITACHI LTD32 citations92
US5021855AJun 4, 1991

Gate turn-off thyristor

HITACHI LTD22 citations91
US5589962ADec 31, 1996

Active matrix display device using aluminum alloy in scanning signal line or video signal line

HITACHI LTD17 citations82
US4626888ADec 2, 1986

Gate turn-off thyristor

HITACHI LTD11 citations74
US4500903AFeb 19, 1985

Semiconductor GTO switching device with radially elongated cathode emitter regions of increasing length

HITACHI LTD8 citations74
US4354121AOct 12, 1982

Field controlled thyristor control circuit with additional FCT in reverse bias circuit

HITACHI LTD10 citations74
US4329772AMay 18, 1982

Method for manufacturing a semiconductor device utilizing selective epitaxial growth and post heat treating

HITACHI LTD11 citations74
US4651189AMar 17, 1987

Semiconductor device provided with electrically floating control electrode

HITACHI LTD3 citations63
US4646122AFeb 24, 1987

Semiconductor device with floating remote gate turn-off means

HITACHI LTD3 citations63
US4713679ADec 15, 1987

Reverse blocking type semiconductor device

HITACHI LTD5 citations62
US4825270AApr 25, 1989

Gate turn-off thyristor

HITACHI LTD4 citations60
US6750477B2Jun 15, 2004

Static induction transistor

HITACHI LTD0 citations51