Inventor
MOFIDI MEHRDAD
US28 patents
⚠️ This page may combine multiple inventors who share the name “MOFIDI MEHRDAD”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SANDISK CORP
21 patentsUS6956770B2Oct 18, 2005
Non-volatile memory and method with bit line compensation dependent on neighboring operating modes
SANDISK CORP630 citations99
US5890192AMar 30, 1999
Concurrent write of multiple chunks of data into multiple subarrays of flash EEPROM
SANDISK CORP531 citations99
US5798968AAug 25, 1998
Plane decode/virtual sector architecture
SANDISK CORP316 citations99
US5621685AApr 15, 1997
Programmable power generation circuit for flash EEPROM memory systems
SANDISK CORP134 citations99
US5596532AJan 21, 1997
Flash EEPROM self-adaptive voltage generation circuit operative within a continuous voltage source range
SANDISK CORP181 citations99
US5592420AJan 7, 1997
Programmable power generation circuit for flash EEPROM memory systems
SANDISK CORP207 citations99
US5563825AOct 8, 1996
Programmable power generation circuit for flash eeprom memory systems
SANDISK CORP157 citations99
US5508971AApr 16, 1996
Programmable power generation circuit for flash EEPROM memory systems
SANDISK CORP265 citations99
US7064980B2Jun 20, 2006
Non-volatile memory and method with bit line coupled compensation
SANDISK CORP99 citations98
US6542956B1Apr 1, 2003
Latched address multi-chunk write to EEPROM
SANDISK CORP82 citations98
US5568424AOct 22, 1996
Programmable power generation circuit for flash EEPROM memory systems
SANDISK CORP85 citations97
US7532514B2May 12, 2009
Non-volatile memory and method with bit line to bit line coupled compensation
SANDISK CORP50 citations96
US7215574B2May 8, 2007
Non-volatile memory and method with bit line compensation dependent on neighboring operating modes
SANDISK CORP44 citations96
US6157983ADec 5, 2000
Concurrent write of multiple chunks of data into multiple subarrays of flash EEPROM
SANDISK CORP41 citations96
US5693570ADec 2, 1997
Process for manufacturing a programmable power generation circuit for flash EEPROM memory systems
SANDISK CORP203 citations96
US6829673B2Dec 7, 2004
Latched address multi-chunk write to EEPROM
SANDISK CORP14 citations93
US6069039AMay 30, 2000
Plane decode/virtual sector architecture
SANDISK CORP28 citations93
US7269069B2Sep 11, 2007
Non-volatile memory and method with bit line to bit line coupled compensation
SANDISK CORP18 citations92
US7447093B2Nov 4, 2008
Method for controlling voltage in non-volatile memory systems
SANDISK CORP3 citations62
US7890694B2Feb 15, 2011
Latched address multi-chunk write to EEPROM
SANDISK CORP0 citations52
US7403434B1Jul 22, 2008
System for controlling voltage in non-volatile memory systems
SANDISK CORP0 citations51
SUNRISE MEMORY CORP
6 patentsUS11580038B2Feb 14, 2023
Quasi-volatile system-level memory
SUNRISE MEMORY CORP21 citations93
US11670620B2Jun 6, 2023
Device with embedded high-bandwidth, high-capacity memory using wafer bonding
SUNRISE MEMORY CORP2 citations72
US12406966B2Sep 2, 2025
Device with embedded high-bandwidth, high-capacity memory using wafer bonding
SUNRISE MEMORY CORP0 citations62
US12068286B2Aug 20, 2024
Device with embedded high-bandwidth, high-capacity memory using wafer bonding
SUNRISE MEMORY CORP0 citations62
US11923341B2Mar 5, 2024
Memory device including modular memory units and modular circuit units for concurrent memory operations
SUNRISE MEMORY CORP0 citations62
US12105650B2Oct 1, 2024
Quasi-volatile system-level memory
SUNRISE MEMORY CORP0 citations61