P

Inventor

ZHAO JACK QINGSHENG

US13 patents

Patents

13 patents
US7033877B2Apr 25, 2006

Vertical replacement-gate junction field-effect transistor

AGERE SYSTEMS INC77 citations97
US7700432B2Apr 20, 2010

Method of fabricating a vertical transistor and capacitor

AGERE SYSTEMS INC14 citations92
US7242056B2Jul 10, 2007

Structure and fabrication method for capacitors integratible with vertical replacement gate transistors

AGERE SYSTEMS INC11 citations92
US6759730B2Jul 6, 2004

Bipolar junction transistor compatible with vertical replacement gate transistor

AGERE SYSTEMS INC41 citations92
US6690040B2Feb 10, 2004

Vertical replacement-gate junction field-effect transistor

AGERE SYSTEMS INC37 citations92
US6686604B2Feb 3, 2004

Multiple operating voltage vertical replacement-gate (VRG) transistor

AGERE SYSTEMS INC39 citations92
US7056783B2Jun 6, 2006

Multiple operating voltage vertical replacement-gate (VRG) transistor

AGERE SYSTEMS INC13 citations83
US7259048B2Aug 21, 2007

Vertical replacement-gate silicon-on-insulator transistor

AGERE SYSTEMS INC6 citations73
US7078280B2Jul 18, 2006

Vertical replacement-gate silicon-on-insulator transistor

AGERE SYSTEMS INC8 citations73
US6709904B2Mar 23, 2004

Vertical replacement-gate silicon-on-insulator transistor

AGERE SYSTEMS INC7 citations73
US7911006B2Mar 22, 2011

Structure and fabrication method for capacitors integratible with vertical replacement gate transistors

AGERE SYSTEMS INC1 citations62
US7633118B2Dec 15, 2009

Structure and fabrication method for capacitors integratible with vertical replacement gate transistors

AGERE SYSTEMS INC0 citations51
US7491610B2Feb 17, 2009

Fabrication method

AGERE SYSTEMS INC0 citations51