Inventor

KONG WENDELL

US3 patents

⚠️ This page may combine multiple inventors who share the name “KONG WENDELL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

BAE SYSTEMS INFORMATION

1 patent

US7943286B2May 17, 2011

Reproducible, high yield method for fabricating ultra-short T-gates on HFETs

BAE SYSTEMS INFORMATION7 citations79

BAE SYS INF & ELECT SYS INTEG

1 patent

US9117838B2Aug 25, 2015

Asymmetrically recessed high-power and high-gain ultra-short gate HEMT device

BAE SYS INF & ELECT SYS INTEG2 citations57

XU DONG

1 patent

US8445941B2May 21, 2013

Asymmetrically recessed high-power and high-gain ultra-short gate HEMT device

XU DONG0 citations44