P

Inventor

CHAO PANE-CHANE

US11 patents
⚠️ This page may combine multiple inventors who share the name “CHAO PANE-CHANE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CORNELL RES FOUNDATION INC

3 patents
US4551905ANov 12, 1985

Fabrication of metal lines for semiconductor devices

CORNELL RES FOUNDATION INC72 citations94
US4536942AAug 27, 1985

Fabrication of T-shaped metal lines for semiconductor devices

CORNELL RES FOUNDATION INC26 citations80
US4673960AJun 16, 1987

Fabrication of metal lines for semiconductor devices

CORNELL RES FOUNDATION INC17 citations72

BAE SYS INF & ELECT SYS INTEG

3 patents
US8003504B2Aug 23, 2011

Structure and method for fabrication of field effect transistor gates with or without field plates

BAE SYS INF & ELECT SYS INTEG7 citations80
US10529820B2Jan 7, 2020

Method for gallium nitride on diamond semiconductor wafer production

BAE SYS INF & ELECT SYS INTEG1 citations58
US9117838B2Aug 25, 2015

Asymmetrically recessed high-power and high-gain ultra-short gate HEMT device

BAE SYS INF & ELECT SYS INTEG2 citations57

BAE SYSTEMS INFORMATION

1 patent
US7943286B2May 17, 2011

Reproducible, high yield method for fabricating ultra-short T-gates on HFETs

BAE SYSTEMS INFORMATION7 citations79

ACTIS ROBERT

1 patent
US9024326B2May 5, 2015

Method and design of an RF thru-via interconnect

ACTIS ROBERT1 citations44

XU DONG

1 patent
US8445941B2May 21, 2013

Asymmetrically recessed high-power and high-gain ultra-short gate HEMT device

XU DONG0 citations44

IMMORLICA ANTHONY A

1 patent
US8304332B2Nov 6, 2012

Structure and method for fabrication of field effect transistor gates with or without field plates

IMMORLICA ANTHONY A1 citations42

CHU KANIN

1 patent
US9136111B1Sep 15, 2015

Field effect transistors with gate electrodes having Ni and Ti metal layers

CHU KANIN0 citations41