Inventor · disambiguated record
Keiichi Yui
Also filed as: YUI KEIICHI
13 granted patents·11 pending applications·26 citations·filing 2008–2018
87Inventor score
Top patents by PatentIndex Score
24 records- 0185US8629479B2Semiconductor deviceNAKATA KEN·Filed 2011·Granted Jan 14, 2014·8 cites·17 claims
- 0280US9123534B2Semiconductor device and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Sep 1, 2015·4 cites·7 claims
- 0379US8993416B2Method of manufacturing semiconductor deviceYUI KEIICHI·Filed 2011·Granted Mar 31, 2015·5 cites·10 claims
- 0474US8546813B2Semiconductor substrate and semiconductor deviceMAKABE ISAO·Filed 2011·Granted Oct 1, 2013·4 cites·24 claims
- 0569US8742426B2Semiconductor deviceNAKATA KEN·Filed 2011·Granted Jun 3, 2014·2 cites·5 claims
- 0667US10038086B2Process for forming a high electron mobility transistorSUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Granted Jul 31, 2018·1 cites·7 claims
- 0765US8754419B2Semiconductor deviceNAKATA KEN·Filed 2011·Granted Jun 17, 2014·2 cites·17 claims
- 0852US2014346530A1Semiconductor device and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Application pending·0 cites
- 0950US9355843B2Semiconductor device and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted May 31, 2016·0 cites·5 claims
- 1049US2018053648A1Method of manufacturing semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Application pending·0 cites
- 1146US10392724B2Process of forming epitaxial waferSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Aug 27, 2019·0 cites·13 claims
- 1246US9029873B2Semiconductor device including an aluminum nitride layer having a calculated area-averaged circularity and a method of manufacturing the deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted May 12, 2015·0 cites·18 claims
- 1345US9159821B2Nitride semiconductor device with limited instantaneous current reductionSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Oct 13, 2015·0 cites·15 claims
- 1445US2012315742A1Method for forming nitride semiconductor deviceYUI KEIICHI·Filed 2012·Application pending·0 cites
- 1545US2016111274A1Method for forming nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Application pending·0 cites
- 1644US2008283822A1Semiconductor light emitting deviceEUDYNA DEVICES INC·Filed 2008·Application pending·0 cites
- 1744US2009098676A1Method of manufacturing light emitting diodeEUDYNA DEVICES INC·Filed 2008·Application pending·0 cites
- 1842US8283240B2Method for fabricating semiconductor deviceYUI KEIICHI·Filed 2011·Granted Oct 9, 2012·0 cites·6 claims
- 1939US2012326165A1Hemt including ain buffer layer with large unevennessNAKATA KEN·Filed 2012·Application pending·0 cites
- 2037US8987015B2Method for fabricating semiconductor deviceYUI KEIICHI·Filed 2011·Granted Mar 24, 2015·0 cites·9 claims
- 2137US2012025202A1Semiconductor device and method for fabricating the sameMAKABE ISAO·Filed 2011·Application pending·0 cites
- 2235US2012025203A1Semiconductor deviceNAKATA KEN·Filed 2011·Application pending·0 cites
- 2332US2015279658A1Method of growing nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Application pending·0 cites
- 2431US2015279942A1Process to produce nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Application pending·0 cites
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