Inventor
LIN YI-HSIUNG
TW63 patents
⚠️ This page may combine multiple inventors who share the name “LIN YI-HSIUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
41 patentsUS9691695B2Jun 27, 2017
Monolithic 3D integration inter-tier vias insertion scheme and associated layout structure
TAIWAN SEMICONDUCTOR MFG CO LTD13 citations93
US11393815B2Jul 19, 2022
Transistors with varying width nanosheet
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11004855B2May 11, 2021
Buried metal track and methods forming same
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10763365B2Sep 1, 2020
Metal rail conductors for non-planar semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US10734321B2Aug 4, 2020
Integrated circuit and method of manufacturing same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10672665B2Jun 2, 2020
Fin field effect transistor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10446555B2Oct 15, 2019
Buried metal track and methods forming same
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10170404B2Jan 1, 2019
Monolithic 3D integration inter-tier vias insertion scheme and associated layout structure
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US9564363B1Feb 7, 2017
Method of forming butted contact
TAIWAN SEMICONDUCTOR MFG CO LTD12 citations84
US11682590B2Jun 20, 2023
Methods of forming contact features in field-effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11495687B2Nov 8, 2022
Metal rail conductors for non-planar semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11404320B2Aug 2, 2022
Fin field effect transistor device structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11127631B2Sep 21, 2021
Semiconductor device with contact structures
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11081403B2Aug 3, 2021
Methods of forming contact features in field-effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11063041B2Jul 13, 2021
Integrated circuit device including a power supply line and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10763198B2Sep 1, 2020
Monolithic 3D integration inter-tier vias insertion scheme and associated layout structure
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10134863B2Nov 20, 2018
Vertical semiconductor device structure and method of forming
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9892224B2Feb 13, 2018
Method of forming masks
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US10727113B2Jul 28, 2020
Methods of forming metal layer structures in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10504775B1Dec 10, 2019
Methods of forming metal layer structures in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US11264204B2Mar 1, 2022
Implanter calibration
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations69
US10818473B2Oct 27, 2020
Implanter calibration
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations69
US12593504B2Mar 31, 2026
Transistors with varying width nanosheet
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12400950B2Aug 26, 2025
Interconnect structure and methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12363879B2Jul 15, 2025
FinFET SRAM cells with reduced fin pitch
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12327765B2Jun 10, 2025
Semiconductor device with contact structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12272605B2Apr 8, 2025
Methods of forming contact features in field-effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12113132B2Oct 8, 2024
Metal rail conductors for non-planar semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12113066B2Oct 8, 2024
Integrated circuit device including a power supply line and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12107012B2Oct 1, 2024
Method for forming fin field effect transistor device structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11848327B2Dec 19, 2023
Integrated circuit device including a power supply line and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11791215B2Oct 17, 2023
Fin field effect transistor device structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11694927B2Jul 4, 2023
Formation method of semiconductor device with contact structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11557532B2Jan 17, 2023
Monolithic 3D integration inter-tier vias insertion scheme and associated layout structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11437385B2Sep 6, 2022
FinFET SRAM cells with reduced fin pitch
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11222842B2Jan 11, 2022
Interconnect structure and methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11004738B2May 11, 2021
Capacitance reduction by metal cut design
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US10879176B2Dec 29, 2020
Integrated circuit structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12125850B2Oct 22, 2024
Buried metal track and methods forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11508661B2Nov 22, 2022
Integrated circuit and method of manufacturing same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11355603B2Jun 7, 2022
Methods and structures of novel contact feature
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
IBM
3 patentsSAMSUNG ELECTRONICS CO LTD
2 patentsUS7488687B2Feb 10, 2009
Methods of forming electrical interconnect structures using polymer residues to increase etching selectivity through dielectric layers
SAMSUNG ELECTRONICS CO LTD7 citations73
US7553758B2Jun 30, 2009
Method of fabricating interconnections of microelectronic device using dual damascene process
SAMSUNG ELECTRONICS CO LTD7 citations70
INFINEON TECHNOLOGIES AG
1 patentUNITED MICROELECTRONICS CORP
1 patentYUAN YIN MACHINERY IND CO LTD
1 patentLIN YI-HSIUNG
1 patentShowing the top 50 of 63 patents by PatentIndex Score.