P

Inventor

LIN YI-HSIUNG

TW63 patents
⚠️ This page may combine multiple inventors who share the name “LIN YI-HSIUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

41 patents
US9691695B2Jun 27, 2017

Monolithic 3D integration inter-tier vias insertion scheme and associated layout structure

TAIWAN SEMICONDUCTOR MFG CO LTD13 citations93
US11393815B2Jul 19, 2022

Transistors with varying width nanosheet

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11004855B2May 11, 2021

Buried metal track and methods forming same

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10763365B2Sep 1, 2020

Metal rail conductors for non-planar semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US10734321B2Aug 4, 2020

Integrated circuit and method of manufacturing same

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10672665B2Jun 2, 2020

Fin field effect transistor device structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10446555B2Oct 15, 2019

Buried metal track and methods forming same

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10170404B2Jan 1, 2019

Monolithic 3D integration inter-tier vias insertion scheme and associated layout structure

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US9564363B1Feb 7, 2017

Method of forming butted contact

TAIWAN SEMICONDUCTOR MFG CO LTD12 citations84
US11682590B2Jun 20, 2023

Methods of forming contact features in field-effect transistors

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11495687B2Nov 8, 2022

Metal rail conductors for non-planar semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11404320B2Aug 2, 2022

Fin field effect transistor device structure

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11127631B2Sep 21, 2021

Semiconductor device with contact structures

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11081403B2Aug 3, 2021

Methods of forming contact features in field-effect transistors

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11063041B2Jul 13, 2021

Integrated circuit device including a power supply line and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10763198B2Sep 1, 2020

Monolithic 3D integration inter-tier vias insertion scheme and associated layout structure

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10134863B2Nov 20, 2018

Vertical semiconductor device structure and method of forming

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9892224B2Feb 13, 2018

Method of forming masks

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US10727113B2Jul 28, 2020

Methods of forming metal layer structures in semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10504775B1Dec 10, 2019

Methods of forming metal layer structures in semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US11264204B2Mar 1, 2022

Implanter calibration

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations69
US10818473B2Oct 27, 2020

Implanter calibration

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations69
US12593504B2Mar 31, 2026

Transistors with varying width nanosheet

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12400950B2Aug 26, 2025

Interconnect structure and methods thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12363879B2Jul 15, 2025

FinFET SRAM cells with reduced fin pitch

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12327765B2Jun 10, 2025

Semiconductor device with contact structures

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12272605B2Apr 8, 2025

Methods of forming contact features in field-effect transistors

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12113132B2Oct 8, 2024

Metal rail conductors for non-planar semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12113066B2Oct 8, 2024

Integrated circuit device including a power supply line and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12107012B2Oct 1, 2024

Method for forming fin field effect transistor device structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11848327B2Dec 19, 2023

Integrated circuit device including a power supply line and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11791215B2Oct 17, 2023

Fin field effect transistor device structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11694927B2Jul 4, 2023

Formation method of semiconductor device with contact structures

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11557532B2Jan 17, 2023

Monolithic 3D integration inter-tier vias insertion scheme and associated layout structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11437385B2Sep 6, 2022

FinFET SRAM cells with reduced fin pitch

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11222842B2Jan 11, 2022

Interconnect structure and methods thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11004738B2May 11, 2021

Capacitance reduction by metal cut design

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US10879176B2Dec 29, 2020

Integrated circuit structure

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12125850B2Oct 22, 2024

Buried metal track and methods forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11508661B2Nov 22, 2022

Integrated circuit and method of manufacturing same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11355603B2Jun 7, 2022

Methods and structures of novel contact feature

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

IBM

3 patents

SAMSUNG ELECTRONICS CO LTD

2 patents

INFINEON TECHNOLOGIES AG

1 patent

UNITED MICROELECTRONICS CORP

1 patent

YUAN YIN MACHINERY IND CO LTD

1 patent

LIN YI-HSIUNG

1 patent

Showing the top 50 of 63 patents by PatentIndex Score.