P

Inventor

CHEN CHIH-HSUAN

TW27 patents
⚠️ This page may combine multiple inventors who share the name “CHEN CHIH-HSUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

22 patents
US11996484B2May 28, 2024

Nano-sheet-based complementary metal-oxide-semiconductor devices with asymmetric inner spacers

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations75
US12294030B2May 6, 2025

Nano-sheet-based complementary metal-oxide-semiconductor devices with asymmetric inner spacers

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations64
US12563825B2Feb 24, 2026

Integrated circuit structure with a reduced amount of defects and methods for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12477811B2Nov 18, 2025

High-k gate dielectric

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12336281B2Jun 17, 2025

Gate structures having neutral zones to minimize metal gate boundary effects and methods of fabricating thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12315738B2May 27, 2025

Method of forming a gate structure including semiconductor material implantation into dummy gate stack

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12159924B2Dec 3, 2024

Structure and method for multigate devices with suppressed diffusion

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12040325B2Jul 16, 2024

Integrated circuit structure with a reduced amount of defects and methods for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12027425B2Jul 2, 2024

Method of forming a gate structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11908866B2Feb 20, 2024

Gate structures having neutral zones to minimize metal gate boundary effects and methods of fabricating thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11862706B2Jan 2, 2024

High-K gate dielectric

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11482610B2Oct 25, 2022

Method of forming a gate structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11349009B2May 31, 2022

High-k gate dielectric

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11329042B2May 10, 2022

Gate structures having neutral zones to minimize metal gate boundary effects and methods of fabricating thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12218227B2Feb 4, 2025

Semiconductor structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11742416B2Aug 29, 2023

Semiconductor structure and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12356660B2Jul 8, 2025

Multi-gate device and related methods

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11949016B2Apr 2, 2024

Multi-gate device and related methods

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations60
US12249636B2Mar 11, 2025

Tuning gate lengths in multi-gate field effect transistors

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12250803B2Mar 11, 2025

Device and method for tuning threshold voltage

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12219747B2Feb 4, 2025

Memory active region layout for improving memory performance

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US11239121B2Feb 1, 2022

Metal gate contacts and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52

TOKYO ELECTRON LTD

2 patents

QUANTA COMP INC

1 patent

NANYA TECHNOLOGY CORP

1 patent

HIWIN TECH CORP

1 patent