P

Inventor

SHIN DONGSUK

US66 patents
⚠️ This page may combine multiple inventors who share the name “SHIN DONGSUK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

31 patents
US7642578B2Jan 5, 2010

Semiconductor device having a round-shaped nano-wire transistor channel and method of manufacturing same

SAMSUNG ELECTRONICS CO LTD62 citations96
US9136176B2Sep 15, 2015

Semiconductor devices including an epitaxial layer with a slanted surface

SAMSUNG ELECTRONICS CO LTD7 citations84
US10090413B2Oct 2, 2018

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD8 citations83
US9252235B2Feb 2, 2016

Semiconductor devices and methods of forming the same

SAMSUNG ELECTRONICS CO LTD6 citations82
US12159911B2Dec 3, 2024

Semiconductor including active contact buried portions

SAMSUNG ELECTRONICS CO LTD2 citations73
US10692993B2Jun 23, 2020

Semiconductor device and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations73
US11948942B2Apr 2, 2024

Integrated circuit device

SAMSUNG ELECTRONICS CO LTD2 citations72
US11631674B2Apr 18, 2023

Integrated circuit device

SAMSUNG ELECTRONICS CO LTD2 citations72
US10784376B2Sep 22, 2020

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD1 citations72
US10411131B2Sep 10, 2019

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD3 citations72
US12154988B2Nov 26, 2024

Multi-oxide-semiconductor field-effect transistor with stacked source/drain structure

SAMSUNG ELECTRONICS CO LTD2 citations71
US11122513B2Sep 14, 2021

Power management integrated circuit, power management method, mobile device and clock adjusting method

SAMSUNG ELECTRONICS CO LTD1 citations70
US10505010B2Dec 10, 2019

Semiconductor device blocking leakage current and method of forming the same

SAMSUNG ELECTRONICS CO LTD3 citations68
US7776723B2Aug 17, 2010

Method of manufacturing an epitaxial semiconductor substrate and method of manufacturing a semiconductor device

SAMSUNG ELECTRONICS CO LTD2 citations63
US12453117B2Oct 21, 2025

Source/drain region of a semiconductor device having an oxygen doped barrier layer formed between first and second epitaxial layers

SAMSUNG ELECTRONICS CO LTD0 citations62
US12324195B2Jun 3, 2025

Multi-channel field effect transistors with enhanced multi-layered source/drain regions

SAMSUNG ELECTRONICS CO LTD1 citations62
US12249606B2Mar 11, 2025

Integrated circuit device

SAMSUNG ELECTRONICS CO LTD0 citations62
US12142671B2Nov 12, 2024

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations62
USRE49963EMay 7, 2024

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11171224B2Nov 9, 2021

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations62
US12046682B2Jul 23, 2024

Integrated circuit devices

SAMSUNG ELECTRONICS CO LTD0 citations61
US11398485B2Jul 26, 2022

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD1 citations60
US11653308B2May 16, 2023

Power management integrated circuit, power management method, mobile device and clock adjusting method

SAMSUNG ELECTRONICS CO LTD0 citations59
US12123789B2Oct 22, 2024

Method and device for temperature detection and thermal management based on power measurement

SAMSUNG ELECTRONICS CO LTD1 citations55
US10304834B2May 28, 2019

Semiconductor devices and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US9640658B2May 2, 2017

Semiconductor devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US9178060B2Nov 3, 2015

Semiconductor devices and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US9082874B2Jul 14, 2015

Semiconductor device including transistor and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US8937343B2Jan 20, 2015

Semiconductor device including transistor and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD1 citations52
US12538517B2Jan 27, 2026

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations51
US12477796B2Nov 18, 2025

Semiconductor device including a vertically stacked channel pattern and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations51

KIM DONG HYUK

4 patents

META PLATFORMS TECH LLC

4 patents

ENDOQUEST ROBOTICS INC

4 patents

SHIN DONGSUK

3 patents

FACEBOOK TECH LLC

2 patents

LEE SUNGYOUNG

1 patent

HEO JUNGHUN

1 patent

Showing the top 50 of 66 patents by PatentIndex Score.