Inventor

HUDSON CARISSIMA MARIE

US31 patents

⚠️ This page may combine multiple inventors who share the name “HUDSON CARISSIMA MARIE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HUDSON CARISSIMA MARIE

GLOBALWAFERS CO LTD

Methods for growing a nitrogen doped single crystal silicon ingot using continuous Czochralski method

High resistivity single crystal silicon ingot and wafer having improved mechanical strength

Single crystal silicon ingot having axial uniformity

Resistivity stabilization measurement of fat neck slabs for high resistivity and ultra-high resistivity single crystal silicon ingot growth

Methods for growing a single crystal silicon ingot using continuous Czochralski method

Use of arrays of quartz particles during single crystal silicon ingot production

Single crystal silicon ingot having axial uniformity

Methods for growing a nitrogen doped single crystal silicon ingot using continuous Czochralski method

High resistivity single crystal silicon ingot and wafer having improved mechanical strength

High resistivity single crystal silicon ingot and wafer having improved mechanical strength

Methods for producing low oxygen silicon ingots

Systems and methods for production of silicon using a horizontal magnetic field

Systems and methods for production of silicon using a horizontal magnetic field

Ingot puller apparatus having heat shields with feet having an apex

Ingot puller apparatus having heat shields with voids therein

Methods for producing a monocrystalline ingot by horizontal magnetic field Czochralski

Methods for producing a product ingot having low oxygen content

Axial positioning of magnetic poles while producing a silicon ingot

Ingot puller apparatus that axially position magnetic poles

Systems and methods for controlling a gas dopant vaporization rate during a crystal growth process

Systems and methods for controlling a gas dopant vaporization rate during a crystal growth process

Ingot puller apparatus having dopant feeders for adding a plurality of dopant batches

Synthetic crucibles with rim coating

GLOBAL WAFERS CO LTD

Methods for modeling the impurity concentration of a single crystal silicon ingot

Sample rod growth and resistivity measurement during single crystal silicon ingot production

Methods for determining the resistivity of a polycrystalline silicon melt

Growth of plural sample rods to determine impurity build-up during production of single crystal silicon ingots

SUNEDISON SEMICONDUCTOR LTD UEN201334164H

Method of treating silicon wafers to have intrinsic gettering and gate oxide integrity yield

Method of treating silicon wafers to have intrinsic gettering and gate oxide integrity yield

SUNEDISON SEMICONDUCTOR LTD

Methods for producing low oxygen silicon ingots

SUNEDISON INC

System for forming an ingot including crucible and conditioning members