P

Inventor

YEH MING-HSI

TW131 patents
⚠️ This page may combine multiple inventors who share the name “YEH MING-HSI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

40 patents
US9761684B2Sep 12, 2017

Method and structure for metal gates

TAIWAN SEMICONDUCTOR MFG CO LTD26 citations93
US9431304B2Aug 30, 2016

Method and structure for metal gates

TAIWAN SEMICONDUCTOR MFG CO LTD28 citations93
US10811320B2Oct 20, 2020

Footing removal in cut-metal process

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10490410B2Nov 26, 2019

Self-protective layer formed on high-K dielectric layer

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10283503B2May 7, 2019

Metal gate structure and methods thereof

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US10283417B1May 7, 2019

Self-protective layer formed on high-k dielectric layers with different materials

TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US10170317B1Jan 1, 2019

Self-protective layer formed on high-k dielectric layer

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9461144B2Oct 4, 2016

Method for semiconductor device fabrication

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations83
US10179878B2Jan 15, 2019

Wet etch chemistry for selective silicon etch

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations82
US11972982B2Apr 30, 2024

Method of manufacturing a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11522083B2Dec 6, 2022

Fin field-effect transistor device and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11404322B2Aug 2, 2022

Method of manufacturing a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11201084B2Dec 14, 2021

Fin field-effect transistor device and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11189714B2Nov 30, 2021

Gate stack structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11114436B2Sep 7, 2021

Metal gate structure and methods thereof

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10748898B2Aug 18, 2020

Metal gate structure and methods thereof

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11557512B2Jan 17, 2023

Wet cleaning with tunable metal recess for via plugs

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US11488857B2Nov 1, 2022

Semiconductor device and method of manufacture using a contact etch stop layer (CESL) breakthrough process

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11488859B2Nov 1, 2022

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US11158726B2Oct 26, 2021

Controlling fin-thinning through feedback

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US11276571B2Mar 15, 2022

Method of breaking through etch stop layer

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations71
US10676668B2Jun 9, 2020

Wet etch chemistry for selective silicon etch

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US10361133B2Jul 23, 2019

High-K metal gate and method for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US10005990B2Jun 26, 2018

Cleaning method for semiconductor device fabrication

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations70
US12046476B2Jul 23, 2024

Wet etching chemistry and method of forming semiconductor device using the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations68
US12469710B2Nov 11, 2025

Method of manufacturing a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12119390B2Oct 15, 2024

Gate spacer structures and methods for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12394669B2Aug 19, 2025

Wet cleaning with tunable metal recess for via plugs

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12376372B2Jul 29, 2025

Fin field-effect transistor and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12376326B2Jul 29, 2025

Gate resistance improvement and method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12369348B2Jul 22, 2025

Fin Field-Effect Transistor device and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12317525B2May 27, 2025

Fin field-effect transistor device and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12308248B2May 20, 2025

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12278288B2Apr 15, 2025

Fin field-effect transistor device having hybrid work function layer stack

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12224204B2Feb 11, 2025

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12183823B2Dec 31, 2024

Fin field-effect transistor with a gate structure having a dielectric protection layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12176422B2Dec 24, 2024

Controlling fin-thinning through feedback

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12136566B2Nov 5, 2024

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12080556B2Sep 3, 2024

Fin field-effect transistor and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12051619B2Jul 30, 2024

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62

YEH MING-HSI

4 patents

TAIWAN SEMICONDUCTOR MFG

3 patents

YU WEIBO

1 patent

IND TECH RES INST

1 patent

CHIEN YING-HSUEH CHANG

1 patent

Showing the top 50 of 131 patents by PatentIndex Score.