Inventor
YEH MING-HSI
TW131 patents
⚠️ This page may combine multiple inventors who share the name “YEH MING-HSI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
40 patentsUS9761684B2Sep 12, 2017
Method and structure for metal gates
TAIWAN SEMICONDUCTOR MFG CO LTD26 citations93
US9431304B2Aug 30, 2016
Method and structure for metal gates
TAIWAN SEMICONDUCTOR MFG CO LTD28 citations93
US10811320B2Oct 20, 2020
Footing removal in cut-metal process
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10490410B2Nov 26, 2019
Self-protective layer formed on high-K dielectric layer
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10283503B2May 7, 2019
Metal gate structure and methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US10283417B1May 7, 2019
Self-protective layer formed on high-k dielectric layers with different materials
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US10170317B1Jan 1, 2019
Self-protective layer formed on high-k dielectric layer
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9461144B2Oct 4, 2016
Method for semiconductor device fabrication
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations83
US10179878B2Jan 15, 2019
Wet etch chemistry for selective silicon etch
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations82
US11972982B2Apr 30, 2024
Method of manufacturing a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11522083B2Dec 6, 2022
Fin field-effect transistor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11404322B2Aug 2, 2022
Method of manufacturing a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11201084B2Dec 14, 2021
Fin field-effect transistor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11189714B2Nov 30, 2021
Gate stack structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11114436B2Sep 7, 2021
Metal gate structure and methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10748898B2Aug 18, 2020
Metal gate structure and methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11557512B2Jan 17, 2023
Wet cleaning with tunable metal recess for via plugs
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US11488857B2Nov 1, 2022
Semiconductor device and method of manufacture using a contact etch stop layer (CESL) breakthrough process
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11488859B2Nov 1, 2022
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US11158726B2Oct 26, 2021
Controlling fin-thinning through feedback
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US11276571B2Mar 15, 2022
Method of breaking through etch stop layer
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations71
US10676668B2Jun 9, 2020
Wet etch chemistry for selective silicon etch
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US10361133B2Jul 23, 2019
High-K metal gate and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US10005990B2Jun 26, 2018
Cleaning method for semiconductor device fabrication
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations70
US12046476B2Jul 23, 2024
Wet etching chemistry and method of forming semiconductor device using the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations68
US12469710B2Nov 11, 2025
Method of manufacturing a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12119390B2Oct 15, 2024
Gate spacer structures and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12394669B2Aug 19, 2025
Wet cleaning with tunable metal recess for via plugs
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12376372B2Jul 29, 2025
Fin field-effect transistor and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12376326B2Jul 29, 2025
Gate resistance improvement and method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12369348B2Jul 22, 2025
Fin Field-Effect Transistor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12317525B2May 27, 2025
Fin field-effect transistor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12308248B2May 20, 2025
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12278288B2Apr 15, 2025
Fin field-effect transistor device having hybrid work function layer stack
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12224204B2Feb 11, 2025
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12183823B2Dec 31, 2024
Fin field-effect transistor with a gate structure having a dielectric protection layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12176422B2Dec 24, 2024
Controlling fin-thinning through feedback
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12136566B2Nov 5, 2024
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12080556B2Sep 3, 2024
Fin field-effect transistor and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12051619B2Jul 30, 2024
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
YEH MING-HSI
4 patentsUS8541270B2Sep 24, 2013
Finlike structures and methods of making same
YEH MING-HSI7 citations84
US8921177B2Dec 30, 2014
Method of fabricating an integrated circuit device
YEH MING-HSI8 citations83
US8657963B2Feb 25, 2014
In-situ backside cleaning of semiconductor substrate
YEH MING-HSI8 citations83
US8518634B2Aug 27, 2013
Cleaning process for semiconductor device fabrication
YEH MING-HSI5 citations72
TAIWAN SEMICONDUCTOR MFG
3 patentsUS8759173B2Jun 24, 2014
Finlike structures and methods of making same
TAIWAN SEMICONDUCTOR MFG5 citations84
US8357574B2Jan 22, 2013
Method of fabricating epitaxial structures
TAIWAN SEMICONDUCTOR MFG9 citations84
US8889502B2Nov 18, 2014
Finlike structures and methods of making same
TAIWAN SEMICONDUCTOR MFG4 citations73
YU WEIBO
1 patentIND TECH RES INST
1 patentCHIEN YING-HSUEH CHANG
1 patentShowing the top 50 of 131 patents by PatentIndex Score.