Inventor
HUANG KUO-BIN
TW87 patents
⚠️ This page may combine multiple inventors who share the name “HUANG KUO-BIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
47 patentsUS11600521B2Mar 7, 2023
Surface modification layer for conductive feature formation
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations86
US10811320B2Oct 20, 2020
Footing removal in cut-metal process
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10490410B2Nov 26, 2019
Self-protective layer formed on high-K dielectric layer
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10312106B2Jun 4, 2019
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10283503B2May 7, 2019
Metal gate structure and methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US10283417B1May 7, 2019
Self-protective layer formed on high-k dielectric layers with different materials
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US10170317B1Jan 1, 2019
Self-protective layer formed on high-k dielectric layer
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10179878B2Jan 15, 2019
Wet etch chemistry for selective silicon etch
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations82
US11189714B2Nov 30, 2021
Gate stack structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11114436B2Sep 7, 2021
Metal gate structure and methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10748898B2Aug 18, 2020
Metal gate structure and methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10699944B2Jun 30, 2020
Surface modification layer for conductive feature formation
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10483108B2Nov 19, 2019
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11557512B2Jan 17, 2023
Wet cleaning with tunable metal recess for via plugs
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US11488857B2Nov 1, 2022
Semiconductor device and method of manufacture using a contact etch stop layer (CESL) breakthrough process
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11158726B2Oct 26, 2021
Controlling fin-thinning through feedback
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US11276571B2Mar 15, 2022
Method of breaking through etch stop layer
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations71
US10676668B2Jun 9, 2020
Wet etch chemistry for selective silicon etch
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US10361133B2Jul 23, 2019
High-K metal gate and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US12046476B2Jul 23, 2024
Wet etching chemistry and method of forming semiconductor device using the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations68
US12394669B2Aug 19, 2025
Wet cleaning with tunable metal recess for via plugs
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12376372B2Jul 29, 2025
Fin field-effect transistor and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12347724B2Jul 1, 2025
Surface modification layer for conductive feature formation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12176422B2Dec 24, 2024
Controlling fin-thinning through feedback
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12136566B2Nov 5, 2024
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12051619B2Jul 30, 2024
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12051626B2Jul 30, 2024
Fin Field-Effect transistor and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11990339B2May 21, 2024
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11942362B2Mar 26, 2024
Surface modification layer for conductive feature formation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11923437B2Mar 5, 2024
Controlling fin-thinning through feedback
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11923201B2Mar 5, 2024
Self-protective layer formed on high-K dielectric layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11923428B2Mar 5, 2024
Fin field-effect transistor and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11854903B2Dec 26, 2023
Footing removal in cut-metal process
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11735426B2Aug 22, 2023
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11658225B2May 23, 2023
Fin field-effect transistor and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11404552B2Aug 2, 2022
Fin Field-Effect Transistor and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11378882B2Jul 5, 2022
Chemical composition for tri-layer removal
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11133200B2Sep 28, 2021
Substrate vapor drying apparatus and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11114347B2Sep 7, 2021
Self-protective layer formed on high-k dielectric layers with different materials
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11101135B2Aug 24, 2021
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11081350B2Aug 3, 2021
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10937656B2Mar 2, 2021
Self-protective layer formed on high-k dielectric layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12520531B2Jan 6, 2026
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12495603B2Dec 9, 2025
Semiconductor device and manufacturing method for the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12439643B2Oct 7, 2025
Fin shape modification
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12381081B2Aug 5, 2025
Method of breaking through etch stop layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12362189B2Jul 15, 2025
Semiconductor devices and methods of manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
TAIWAN SEMICONDUCTOR MFG
2 patentsHUANG KUO BIN
1 patentShowing the top 50 of 87 patents by PatentIndex Score.