Inventor
HSIA STEVE KUO-REN
US33 patents
⚠️ This page may combine multiple inventors who share the name “HSIA STEVE KUO-REN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITY SEMICONDUCTOR CORP
27 patentsUS6970375B2Nov 29, 2005
Providing a reference voltage to a cross point memory array
UNITY SEMICONDUCTOR CORP108 citations99
US6965137B2Nov 15, 2005
Multi-layer conductive memory device
UNITY SEMICONDUCTOR CORP168 citations99
US6834008B2Dec 21, 2004
Cross point memory array using multiple modes of operation
UNITY SEMICONDUCTOR CORP161 citations99
US6753561B1Jun 22, 2004
Cross point memory array using multiple thin films
UNITY SEMICONDUCTOR CORP425 citations99
US7884349B2Feb 8, 2011
Selection device for re-writable memory
UNITY SEMICONDUCTOR CORP76 citations98
US7400006B1Jul 15, 2008
Conductive memory device with conductive oxide electrodes
UNITY SEMICONDUCTOR CORP58 citations98
US7071008B2Jul 4, 2006
Multi-resistive state material that uses dopants
UNITY SEMICONDUCTOR CORP69 citations98
US7067862B2Jun 27, 2006
Conductive memory device with conductive oxide electrodes
UNITY SEMICONDUCTOR CORP142 citations98
US6870755B2Mar 22, 2005
Re-writable memory with non-linear memory element
UNITY SEMICONDUCTOR CORP137 citations98
US6850429B2Feb 1, 2005
Cross point memory array with memory plugs exhibiting a characteristic hysteresis
UNITY SEMICONDUCTOR CORP73 citations98
US7889539B2Feb 15, 2011
Multi-resistive state memory device with conductive oxide electrodes
UNITY SEMICONDUCTOR CORP19 citations96
US7633790B2Dec 15, 2009
Multi-resistive state memory device with conductive oxide electrodes
UNITY SEMICONDUCTOR CORP23 citations96
US7394679B2Jul 1, 2008
Multi-resistive state element with reactive metal
UNITY SEMICONDUCTOR CORP20 citations96
US7082052B2Jul 25, 2006
Multi-resistive state element with reactive metal
UNITY SEMICONDUCTOR CORP35 citations96
US6972985B2Dec 6, 2005
Memory element having islands
UNITY SEMICONDUCTOR CORP55 citations96
US6798685B2Sep 28, 2004
Multi-output multiplexor
UNITY SEMICONDUCTOR CORP60 citations96
US7439082B2Oct 21, 2008
Conductive memory stack with non-uniform width
UNITY SEMICONDUCTOR CORP20 citations93
US7042035B2May 9, 2006
Memory array with high temperature wiring
UNITY SEMICONDUCTOR CORP45 citations93
US6909632B2Jun 21, 2005
Multiple modes of operation in a cross point array
UNITY SEMICONDUCTOR CORP21 citations93
US9806130B2Oct 31, 2017
Memory element with a reactive metal layer
UNITY SEMICONDUCTOR CORP10 citations92
US9570515B2Feb 14, 2017
Memory element with a reactive metal layer
UNITY SEMICONDUCTOR CORP12 citations92
US9159408B2Oct 13, 2015
Memory element with a reactive metal layer
UNITY SEMICONDUCTOR CORP12 citations92
US7326979B2Feb 5, 2008
Resistive memory device with a treated interface
UNITY SEMICONDUCTOR CORP51 citations92
US7309616B2Dec 18, 2007
Laser annealing of complex metal oxides (CMO) memory materials for non-volatile memory integrated circuits
UNITY SEMICONDUCTOR CORP23 citations92
US7186569B2Mar 6, 2007
Conductive memory stack with sidewall
UNITY SEMICONDUCTOR CORP20 citations91
US7528405B2May 5, 2009
Conductive memory stack with sidewall
UNITY SEMICONDUCTOR CORP9 citations84
US7847330B2Dec 7, 2010
Four vertically stacked memory layers in a non-volatile re-writeable memory device
UNITY SEMICONDUCTOR CORP4 citations63
HEFEI RELIANCE MEMORY LTD
3 patentsUS10340312B2Jul 2, 2019
Memory element with a reactive metal layer
HEFEI RELIANCE MEMORY LTD6 citations84
US11502249B2Nov 15, 2022
Memory element with a reactive metal layer
HEFEI RELIANCE MEMORY LTD0 citations73
US10833125B2Nov 10, 2020
Memory element with a reactive metal layer
HEFEI RELIANCE MEMORY LTD0 citations62