Inventor
KAMMERLANDER DAVID
AT9 patents
⚠️ This page may combine multiple inventors who share the name “KAMMERLANDER DAVID”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
6 patentsUS11961904B2Apr 16, 2024
Semiconductor device including trench gate structure and buried shielding region and method of manufacturing
INFINEON TECHNOLOGIES AG2 citations71
US12471302B2Nov 11, 2025
Silicon carbide device with trench gate structure
INFINEON TECHNOLOGIES AG0 citations61
US12295156B2May 6, 2025
Semiconductor device including trench gate structure and buried shielding region and method of manufacturing
INFINEON TECHNOLOGIES AG0 citations61
US11876133B2Jan 16, 2024
Silicon carbide device with transistor cell and clamp region
INFINEON TECHNOLOGIES AG0 citations61
US11211468B2Dec 28, 2021
Silicon carbide device with trench gate structure and method of manufacturing
INFINEON TECHNOLOGIES AG0 citations61
US12057473B2Aug 6, 2024
Silicon carbide device with transistor cell and clamp regions in a well region
INFINEON TECHNOLOGIES AG0 citations51
INFINEON TECHNOLOGIES AUSTRIA AG
3 patentsUS10126355B1Nov 13, 2018
Semiconductor probe test card with integrated hall measurement features
INFINEON TECHNOLOGIES AUSTRIA AG2 citations65
US12550387B2Feb 10, 2026
Trench junction field effect transistor having a mesa region
INFINEON TECHNOLOGIES AUSTRIA AG0 citations51
US12349401B2Jul 1, 2025
Semiconductor device including a trench structure having a trench dielectric structure with a gap
INFINEON TECHNOLOGIES AUSTRIA AG0 citations51