Inventor
CHENG PENG
CN264 patents
⚠️ This page may combine multiple inventors who share the name “CHENG PENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTEL CORP
28 patentsUS6808954B2Oct 26, 2004
Vacuum-cavity MEMS resonator
INTEL CORP146 citations99
US6063688AMay 16, 2000
Fabrication of deep submicron structures and quantum wire transistors using hard-mask transistor width definition
INTEL CORP513 citations99
US7002436B2Feb 21, 2006
Vacuum-cavity MEMS resonator
INTEL CORP68 citations98
US6621137B1Sep 16, 2003
MEMS device integrated chip package, and method of making same
INTEL CORP110 citations98
US6573822B2Jun 3, 2003
Tunable inductor using microelectromechanical switches
INTEL CORP124 citations98
US6445106B1Sep 3, 2002
Micro-electromechanical structure resonator, method of making, and method of using
INTEL CORP60 citations96
US6355534B1Mar 12, 2002
Variable tunable range MEMS capacitor
INTEL CORP67 citations96
US6022815AFeb 8, 2000
Method of fabricating next-to-minimum-size transistor gate using mask-edge gate definition technique
INTEL CORP61 citations96
US5536684AJul 16, 1996
Process for formation of epitaxial cobalt silicide and shallow junction of silicon
INTEL CORP56 citations96
US7291561B2Nov 6, 2007
MEMS device integrated chip package, and method of making same
INTEL CORP27 citations93
US7245057B2Jul 17, 2007
Micro-electromechanical structure resonator frequency adjustment using radiant energy trimming and laser/focused ion beam assisted deposition
INTEL CORP18 citations93
US6998357B2Feb 14, 2006
High dielectric constant metal oxide gate dielectrics
INTEL CORP13 citations93
US6980412B2Dec 27, 2005
Variable tunable range MEMS capacitor
INTEL CORP23 citations93
US6890829B2May 10, 2005
Fabrication of on-package and on-chip structure using build-up layer process
INTEL CORP30 citations93
US6737710B2May 18, 2004
Transistor structure having silicide source/drain extensions
INTEL CORP34 citations93
US6630871B2Oct 7, 2003
Center-mass-reduced microbridge structures for ultra-high frequency MEM resonator
INTEL CORP39 citations93
US6600389B2Jul 29, 2003
Tapered structures for generating a set of resonators with systematic resonant frequencies
INTEL CORP29 citations93
US6596609B2Jul 22, 2003
Method of fabricating a feature in an integrated circuit using two edge definition layers and a spacer
INTEL CORP22 citations93
US6593672B2Jul 15, 2003
MEMS-switched stepped variable capacitor and method of making same
INTEL CORP39 citations93
US6570468B2May 27, 2003
Resonator frequency correction by modifying support structures
INTEL CORP35 citations93
US6570220B2May 27, 2003
Fabrication of deep submicron structures and quantum wire transistors using hard-mask transistor width definition
INTEL CORP20 citations93
US6528856B1Mar 4, 2003
High dielectric constant metal oxide gate dielectrics
INTEL CORP22 citations93
US6479921B2Nov 12, 2002
Micro-electromechanical structure resonator, method of making, and method of using
INTEL CORP16 citations93
US6187694B1Feb 13, 2001
Method of fabricating a feature in an integrated circuit using two edge definition layers and a spacer
INTEL CORP34 citations93
US6121093ASep 19, 2000
Method of making asymmetrical transistor structures
INTEL CORP28 citations93
US5891805AApr 6, 1999
Method of forming contacts
INTEL CORP33 citations93
US6277765B1Aug 21, 2001
Low-K Dielectric layer and method of making same
INTEL CORP47 citations92
US5918132AJun 29, 1999
Method for narrow space formation and self-aligned channel implant
INTEL CORP35 citations92
IBM
4 patentsUS8810005B1Aug 19, 2014
Bipolar device having a monocrystalline semiconductor intrinsic base to extrinsic base link-up region
IBM7 citations84
US9653477B2May 16, 2017
Single-chip field effect transistor (FET) switch with silicon germanium (SiGe) power amplifier and methods of forming
IBM6 citations83
US9646993B2May 9, 2017
Single-chip field effect transistor (FET) switch with silicon germanium (SiGe) power amplifier and methods of forming
IBM7 citations83
US9029229B2May 12, 2015
Semiconductor device and method of forming the device by forming monocrystalline semiconductor layers on a dielectric layer over isolation regions
IBM10 citations82
METABOLEX INC
3 patentsUS7638541B2Dec 29, 2009
5-ethyl-2-{4-[4-(4-tetrazol-1-yl-phenoxymethyl)-thiazol-2-yl]-piperidin-1-yl}-pyrimidine
METABOLEX INC43 citations95
US7714131B2May 11, 2010
Process for the stereoselective preparation of (−)-halofenate and derivatives thereof
METABOLEX INC9 citations84
US7432394B2Oct 7, 2008
Resolution of α-(phenoxy) phenylacetic acid derivatives with naphthyl-alkylamines
METABOLEX INC12 citations84
TENCENT TECH SHENZHEN CO LTD
2 patentsCHEN XIN
2 patentsNINEBOT BEIJING TECH CO LTD
2 patentsCHILDRENS NAT MEDICAL CT
1 patentCHILDREN'S NAT MEDICAL CENTER
1 patentHUIZHOU TCL MOBILE COMMUNICATION CO LTD
1 patentQORVO US INC
1 patentQUALCOMM INC
1 patentMICROSOFT TECHNOLOGY LICENSING LLC
1 patentBOE TECHNOLOGY GROUP CO LTD
1 patentYADEA TECH GROUP CO LTD
1 patentMA HONGBIN
1 patentShowing the top 50 of 264 patents by PatentIndex Score.