Inventor
KANG DONGHUN
KR22 patents
⚠️ This page may combine multiple inventors who share the name “KANG DONGHUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
GLOBALFOUNDRIES INC
6 patentsUS10020202B2Jul 10, 2018
Fabrication of multi threshold-voltage devices
GLOBALFOUNDRIES INC2 citations73
US9754945B2Sep 5, 2017
Non-volatile memory device employing a deep trench capacitor
GLOBALFOUNDRIES INC4 citations73
US10083967B2Sep 25, 2018
Non-volatile memory device employing a deep trench capacitor
GLOBALFOUNDRIES INC0 citations52
US10483205B2Nov 19, 2019
Contact using multilayer liner
GLOBALFOUNDRIES INC0 citations49
US9960118B2May 1, 2018
Contact using multilayer liner
GLOBALFOUNDRIES INC1 citations49
US9269607B2Feb 23, 2016
Wafer stress control with backside patterning
GLOBALFOUNDRIES INC1 citations49
SAMSUNG ELECTRONICS CO LTD
6 patentsUSD1092546SSep 9, 2025
Display screen or portion thereof with transitional graphical user interface
SAMSUNG ELECTRONICS CO LTD1 citations62
US10580719B2Mar 3, 2020
Semiconductor memory device providing analysis and correcting of soft data fail in stacked chips
SAMSUNG ELECTRONICS CO LTD4 citations61
USD1113952SFeb 17, 2026
Display screen or portion thereof with graphical user interface
SAMSUNG ELECTRONICS CO LTD0 citations60
USD1113954SFeb 17, 2026
Display screen or portion thereof with graphical user interface
SAMSUNG ELECTRONICS CO LTD0 citations60
USD1110346SJan 27, 2026
Display screen or portion thereof with graphical user interface
SAMSUNG ELECTRONICS CO LTD0 citations60
USD1092547SSep 9, 2025
Display screen or portion thereof with graphical user interface
SAMSUNG ELECTRONICS CO LTD0 citations60
IBM
5 patentsUS9997348B2Jun 12, 2018
Wafer stress control and topography compensation
IBM2 citations73
US9870960B2Jan 16, 2018
Capacitance monitoring using X-ray diffraction
IBM2 citations72
US9911597B2Mar 6, 2018
Trench metal insulator metal capacitor with oxygen gettering layer
IBM0 citations52
US9653534B2May 16, 2017
Trench metal-insulator-metal capacitor with oxygen gettering layer
IBM1 citations52
US10008421B2Jun 26, 2018
Capacitance monitoring using x-ray diffraction
IBM0 citations51
ATOMERA INC
3 patentsUS12230694B2Feb 18, 2025
Method for making nanostructure transistors with source/drain trench contact liners
ATOMERA INC0 citations62
US12142669B2Nov 12, 2024
Method for making nanostructure transistors with flush source/drain dopant blocking structures including a superlattice
ATOMERA INC0 citations62
US12142662B2Nov 12, 2024
Method for making nanostructure transistors with offset source/drain dopant blocking structures including a superlattice
ATOMERA INC0 citations62