Inventor

HAUSMANN DENNIS M

US63 patents

⚠️ This page may combine multiple inventors who share the name “HAUSMANN DENNIS M”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HAUSMANN DENNIS M

LAM RES CORP

EUV photopatterning of vapor-deposited metal oxide-containing hardmasks

Selective growth of silicon nitride

Selective inhibition in atomic layer deposition of silicon-containing films

Bromine containing silicon precursors for encapsulation layers

Vacuum-integrated hardmask processes and apparatus

Selective inhibition in atomic layer deposition of silicon-containing films

Vacuum-integrated hardmask processes and apparatus

Method for encapsulating a chalcogenide material

Methods and apparatuses for uniform reduction of the in-feature wet etch rate of a silicon nitride film formed by ALD

Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)

Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)

Vacuum-integrated hardmask processes and apparatus

Vacuum-integrated hardmask processes and apparatus

Integrating atomic scale processes: ALD (atomic layer deposition) and ale (atomic layer etch)

Selective growth of silicon oxide or silicon nitride on silicon surfaces in the presence of silicon oxide

Method of depositing ammonia free and chlorine free conformal silicon nitride film

Deposition of Aluminum oxide etch stop layers

Bromine containing silicon precursors for encapsulation layers

Deposition of aluminum oxide etch stop layers

Technique to deposit sidewall passivation for high aspect ratio cylinder etch

Selective growth of SiO2 on dielectric surfaces in the presence of copper

Selective inhibition in atomic layer deposition of silicon-containing films

Selective growth of silicon oxide or silicon nitride on silicon surfaces in the presence of silicon oxide

Gapfill of variable aspect ratio features with a composite PEALD and PECVD method

Selective deposition of silicon oxide

Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)

Selective growth of silicon nitride

Selective deposition of silicon nitride on silicon oxide using catalytic control

Selective deposition of silicon oxide

Geometrically selective deposition of a dielectric film

Selective growth of metal-containing hardmask thin films

Selective deposition with atomic layer etch reset

Method for reducing the wet etch rate of a sin film without damaging the underlying substrate

Gapfill of variable aspect ratio features with a composite PEALD and PECVD method

NOVELLUS SYSTEMS INC

Sequential deposition/anneal film densification method

Conformal nanolaminate dielectric deposition and etch bag gap fill process

Sequential deposition/anneal film densification method

Method for controlling properties of conformal silica nanolaminates formed by rapid vapor deposition

Plasma activated conformal dielectric film deposition

Properties of a silica thin film produced by a rapid vapor deposition (RVD) process

Plasma activated conformal film deposition

Methods for the use of alkoxysilanol precursors for vapor deposition of SiO2 films

Methods for forming high density, conformal, silica nanolaminate films via pulsed deposition layer in structures of confined geometry

Silica thin films produced by rapid surface catalyzed vapor deposition (RVD) using a nucleation layer

Aluminum phosphate incorporation in silica thin films produced by rapid surface catalyzed vapor deposition (RVD)

Mixed alkoxy precursors and methods of their use for rapid vapor deposition of SiO2 films

Dynamic rapid vapor deposition process for conformal silica laminates

Metal-free catalysts for pulsed deposition layer process for conformal silica laminates

LAVOIE ADRIEN

Plasma activated conformal film deposition

SWAMINATHAN SHANKAR

Plasma activated conformal dielectric film deposition