Inventor

CHOE TAE-HEE

KR15 patents

Patents

15 patents

US7642140B2Jan 5, 2010

CMOS integrated circuit devices and substrates having buried silicon germanium layers therein and method of forming same

SAMSUNG ELECTRONICS CO LTD135 citations99

US6633066B1Oct 14, 2003

CMOS integrated circuit devices and substrates having unstrained silicon active layers

SAMSUNG ELECTRONICS CO LTD124 citations99

US6670677B2Dec 30, 2003

SOI substrate having an etch stop layer and an SOI integrated circuit fabricated thereon

SAMSUNG ELECTRONICS CO LTD45 citations96

US6881621B2Apr 19, 2005

Method of fabricating SOI substrate having an etch stop layer, and method of fabricating SOI integrated circuit using the same

SAMSUNG ELECTRONICS CO LTD19 citations93

US6794306B2Sep 21, 2004

Semiconductor device having gate all around type transistor and method of forming the same

SAMSUNG ELECTRONICS CO LTD16 citations93

US6605847B2Aug 12, 2003

Semiconductor device having gate all around type transistor and method of forming the same

SAMSUNG ELECTRONICS CO LTD32 citations93

US6524902B2Feb 25, 2003

Method of manufacturing CMOS semiconductor device

SAMSUNG ELECTRONICS CO LTD26 citations93

US7195987B2Mar 27, 2007

Methods of forming CMOS integrated circuit devices and substrates having buried silicon germanium layers therein

SAMSUNG ELECTRONICS CO LTD26 citations92

US6914301B2Jul 5, 2005

CMOS integrated circuit devices and substrates having buried silicon germanium layers therein and methods of forming same

SAMSUNG ELECTRONICS CO LTD20 citations92

US6693013B2Feb 17, 2004

Semiconductor transistor using L-shaped spacer and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD29 citations92

US6518645B2Feb 11, 2003

SOI-type semiconductor device and method of forming the same

SAMSUNG ELECTRONICS CO LTD44 citations92

US6580134B1Jun 17, 2003

Field effect transistors having elevated source/drain regions

SAMSUNG ELECTRONICS CO LTD22 citations91

US6917085B2Jul 12, 2005

Semiconductor transistor using L-shaped spacer

SAMSUNG ELECTRONICS CO LTD7 citations74

US6750532B2Jun 15, 2004

CMOS semiconductor device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD9 citations74

US6881630B2Apr 19, 2005

Methods for fabricating field effect transistors having elevated source/drain regions

SAMSUNG ELECTRONICS CO LTD9 citations72