P

Inventor

KANG DONG-KYUN

KR22 patents
⚠️ This page may combine multiple inventors who share the name “KANG DONG-KYUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SK HYNIX INC

11 patents
US9634011B2Apr 25, 2017

Semiconductor device having buried gate structure and method for manufacturing the same, memory cell having the same and electronic device having the same

SK HYNIX INC21 citations94
US10153284B2Dec 11, 2018

Semiconductor device having buried gate structure and method for manufacturing the same, memory cell having the same and electronic device having the same

SK HYNIX INC4 citations84
US10037997B1Jul 31, 2018

Semiconductor device having buried gate structure and method for manufacturing the same, memory cell having the same and electronic device having the same

SK HYNIX INC4 citations84
US9947667B2Apr 17, 2018

Semiconductor device having buried gate structure and method for manufacturing the same, memory cell having the same and electronic device having the same

SK HYNIX INC5 citations84
US9748248B2Aug 29, 2017

Semiconductor device having buried gate structure, method for manufacturing the same, memory cell having the same, and electronic device having the same

SK HYNIX INC12 citations84
US9449830B2Sep 20, 2016

Transistor having tungsten-based buried gate structure, method for fabricating the same

SK HYNIX INC10 citations84
US9431496B2Aug 30, 2016

Dual work function buried gate-type transistor, method for forming the same, and electronic device including the same

SK HYNIX INC14 citations84
US9601590B2Mar 21, 2017

Dual work function buried gate-type transistor, method for forming the same, and electronic device including the same

SK HYNIX INC5 citations73
US9070749B2Jun 30, 2015

Semiconductor device including fluorine-free tungsten barrier layer and method for fabricating the same

SK HYNIX INC6 citations73
US9245806B2Jan 26, 2016

Semiconductor device with transistor and method of fabricating the same

SK HYNIX INC2 citations62
US9281373B2Mar 8, 2016

Semiconductor device having tungsten gate electrode and method for fabricating the same

SK HYNIX INC1 citations52

SAMSUNG ELECTRONICS CO LTD

7 patents

NEOREACH INC

2 patents

EUN JIN SOHN PATENT & LAW OFFI

1 patent

KOREA ADVANCED INST SCI & TECH

1 patent