Inventor
LETAVIC THEODORE J
US17 patents
⚠️ This page may combine multiple inventors who share the name “LETAVIC THEODORE J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
6 patentsUS8901710B2Dec 2, 2014
Interdigitated capacitors with a zero quadratic voltage coefficient of capacitance or zero linear temperature coefficient of capacitance
IBM7 citations83
US9337310B2May 10, 2016
Low leakage, high frequency devices
IBM5 citations73
US9236449B2Jan 12, 2016
High voltage laterally diffused metal oxide semiconductor
IBM3 citations73
US9059276B2Jun 16, 2015
High voltage laterally diffused metal oxide semiconductor
IBM3 citations63
US9240463B2Jan 19, 2016
High voltage laterally diffused metal oxide semiconductor
IBM0 citations52
US9245960B2Jan 26, 2016
Lateral extended drain metal oxide semiconductor field effect transistor (LEDMOSFET) with tapered airgap field plates
IBM0 citations42
GLOBALFOUNDRIES INC
3 patentsUS10818807B2Oct 27, 2020
Semiconductor detectors integrated with Bragg reflectors
GLOBALFOUNDRIES INC4 citations73
US9799652B1Oct 24, 2017
Semiconductor structure with a dopant implant region having a linearly graded conductivity level and method of forming the structure
GLOBALFOUNDRIES INC3 citations73
US9768028B1Sep 19, 2017
Semiconductor structure with a dopant implant region having a linearly graded conductivity level and method of forming the structure
GLOBALFOUNDRIES INC2 citations73
ABOU-KHALIL MICHEL J
3 patentsUS8299547B2Oct 30, 2012
Lateral extended drain metal oxide semiconductor field effect transistor (LEDMOSFET) with tapered dielectric plates
ABOU-KHALIL MICHEL J5 citations62
US8482067B2Jul 9, 2013
Lateral extended drain metal oxide semiconductor field effect transistor (LEDMOSFET) with tapered dielectric plates to achieve a high drain-to-body breakdown voltage, a method of forming the transistor and a program storage device for designing the transistor
ABOU-KHALIL MICHEL J0 citations52
US8901676B2Dec 2, 2014
Lateral extended drain metal oxide semiconductor field effect transistor (LEDMOSFET) having a high drain-to-body breakdown voltage (Vb), a method of forming an LEDMOSFET, and a silicon-controlled rectifier (SCR) incorporating a complementary pair of LEDMOSFETs
ABOU-KHALIL MICHEL J0 citations41
KONINKL PHILIPS ELECTRONICS NV
3 patentsUS6627958B2Sep 30, 2003
Lateral high voltage semiconductor device having a sense terminal and method for sensing a drain voltage of the same
KONINKL PHILIPS ELECTRONICS NV3 citations62
US7268046B2Sep 11, 2007
Dual gate oxide high-voltage semiconductor device and method for forming the same
KONINKL PHILIPS ELECTRONICS NV4 citations61
US6847081B2Jan 25, 2005
Dual gate oxide high-voltage semiconductor device
KONINKL PHILIPS ELECTRONICS NV4 citations61