P

Inventor

PARK CHUL-SUNG

KR37 patents
⚠️ This page may combine multiple inventors who share the name “PARK CHUL-SUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

30 patents
US6958947B2Oct 25, 2005

Semiconductor memory device with internal voltage generators for testing a memory array and peripheral circuits

SAMSUNG ELECTRONICS CO LTD92 citations97
US5835400ANov 10, 1998

Ferroelectric memory devices having nondestructive read capability and methods of operating same

SAMSUNG ELECTRONICS CO LTD47 citations93
US7327630B2Feb 5, 2008

Memory cell power switching circuit in semiconductor memory device and method for applying memory cell power voltage

SAMSUNG ELECTRONICS CO LTD28 citations92
US6747885B2Jun 8, 2004

Ternary content addressable memory device

SAMSUNG ELECTRONICS CO LTD27 citations92
US5576639ANov 19, 1996

BICMOS level shifter of a semiconductor integrated circuit and data output buffer using the same

SAMSUNG ELECTRONICS CO LTD25 citations92
US6822330B2Nov 23, 2004

Semiconductor integrated circuit device with test element group circuit

SAMSUNG ELECTRONICS CO LTD24 citations91
US7362128B2Apr 22, 2008

Programmable impedance control circuit in semiconductor device and impedance range shifting method thereof

SAMSUNG ELECTRONICS CO LTD31 citations90
US7105917B2Sep 12, 2006

Semiconductor device having a fuse connected to a pad and fabrication method thereof

SAMSUNG ELECTRONICS CO LTD24 citations90
US9047929B2Jun 2, 2015

Memory system having memory ranks and related tuning method

SAMSUNG ELECTRONICS CO LTD7 citations84
US7379355B2May 27, 2008

Circuit for enabling sense amplifier and semiconductor memory device having the same

SAMSUNG ELECTRONICS CO LTD15 citations84
US5805012ASep 8, 1998

Systems and methods for compensating a buffer for power supply fluctuation

SAMSUNG ELECTRONICS CO LTD15 citations74
US9135981B2Sep 15, 2015

Memory system having memory ranks and related tuning method

SAMSUNG ELECTRONICS CO LTD4 citations73
US10318469B2Jun 11, 2019

Semiconductor memory device, memory system, and method using bus-invert encoding

SAMSUNG ELECTRONICS CO LTD2 citations72
US7499310B2Mar 3, 2009

Bit line voltage supply circuit in semiconductor memory device and voltage supplying method therefor

SAMSUNG ELECTRONICS CO LTD7 citations72
US7068058B2Jun 27, 2006

Semiconductor integrated circuit device with test element group circuit

SAMSUNG ELECTRONICS CO LTD7 citations72
US7288966B2Oct 30, 2007

Programmable impedance controller and method for operating

SAMSUNG ELECTRONICS CO LTD8 citations71
US9436545B2Sep 6, 2016

Semiconducotr memory device including non-volatile memory cell array

SAMSUNG ELECTRONICS CO LTD2 citations63
US9147465B2Sep 29, 2015

Circuit for controlling sense amplifier source node in semiconductor memory device and controlling method thereof

SAMSUNG ELECTRONICS CO LTD2 citations63
US6836441B2Dec 28, 2004

Apparatus of repairing memory cell and method therefor

SAMSUNG ELECTRONICS CO LTD2 citations63
US6693831B2Feb 17, 2004

Apparatus of repairing memory cell and method therefor

SAMSUNG ELECTRONICS CO LTD2 citations63
US6678193B2Jan 13, 2004

Apparatus and method for tracking between data and echo clock

SAMSUNG ELECTRONICS CO LTD4 citations63
US7902871B2Mar 8, 2011

Level shifter and semiconductor device having off-chip driver

SAMSUNG ELECTRONICS CO LTD4 citations62
US7548485B2Jun 16, 2009

Semiconductor memory device capable of synchronous/asynchronous operation and data input/output method thereof

SAMSUNG ELECTRONICS CO LTD5 citations61
US10985139B2Apr 20, 2021

Semiconductor chip for sensing temperature and semiconductor system including the same

SAMSUNG ELECTRONICS CO LTD1 citations60
US9830083B2Nov 28, 2017

Memory chip, memory system, and method of accessing the memory chip

SAMSUNG ELECTRONICS CO LTD1 citations52
US9412429B2Aug 9, 2016

Memory device with multiple voltage generators

SAMSUNG ELECTRONICS CO LTD0 citations51
US6949960B2Sep 27, 2005

Semiconductor integrated circuit comprising functional modes

SAMSUNG ELECTRONICS CO LTD0 citations51
US7151710B2Dec 19, 2006

Semiconductor memory device with data input/output organization in multiples of nine bits

SAMSUNG ELECTRONICS CO LTD0 citations50
US6909661B2Jun 21, 2005

Semiconductor memory device with data input/output organization in multiples of nine bits

SAMSUNG ELECTRONICS CO LTD1 citations50
US7340560B2Mar 4, 2008

Methods and devices for accessing a memory using multiple separate address mapped temporary storage areas

SAMSUNG ELECTRONICS CO LTD0 citations44

CHUNG HOI-JU

2 patents

AMAZON TECH INC

1 patent

PARK DUK-HA

1 patent

PARK CHUL SUNG

1 patent

YANG HUI-KAP

1 patent

YU KI HUN

1 patent