Inventor
PARK CHUL-SUNG
KR37 patents
⚠️ This page may combine multiple inventors who share the name “PARK CHUL-SUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
30 patentsUS6958947B2Oct 25, 2005
Semiconductor memory device with internal voltage generators for testing a memory array and peripheral circuits
SAMSUNG ELECTRONICS CO LTD92 citations97
US5835400ANov 10, 1998
Ferroelectric memory devices having nondestructive read capability and methods of operating same
SAMSUNG ELECTRONICS CO LTD47 citations93
US7327630B2Feb 5, 2008
Memory cell power switching circuit in semiconductor memory device and method for applying memory cell power voltage
SAMSUNG ELECTRONICS CO LTD28 citations92
US6747885B2Jun 8, 2004
Ternary content addressable memory device
SAMSUNG ELECTRONICS CO LTD27 citations92
US5576639ANov 19, 1996
BICMOS level shifter of a semiconductor integrated circuit and data output buffer using the same
SAMSUNG ELECTRONICS CO LTD25 citations92
US6822330B2Nov 23, 2004
Semiconductor integrated circuit device with test element group circuit
SAMSUNG ELECTRONICS CO LTD24 citations91
US7362128B2Apr 22, 2008
Programmable impedance control circuit in semiconductor device and impedance range shifting method thereof
SAMSUNG ELECTRONICS CO LTD31 citations90
US7105917B2Sep 12, 2006
Semiconductor device having a fuse connected to a pad and fabrication method thereof
SAMSUNG ELECTRONICS CO LTD24 citations90
US9047929B2Jun 2, 2015
Memory system having memory ranks and related tuning method
SAMSUNG ELECTRONICS CO LTD7 citations84
US7379355B2May 27, 2008
Circuit for enabling sense amplifier and semiconductor memory device having the same
SAMSUNG ELECTRONICS CO LTD15 citations84
US5805012ASep 8, 1998
Systems and methods for compensating a buffer for power supply fluctuation
SAMSUNG ELECTRONICS CO LTD15 citations74
US9135981B2Sep 15, 2015
Memory system having memory ranks and related tuning method
SAMSUNG ELECTRONICS CO LTD4 citations73
US10318469B2Jun 11, 2019
Semiconductor memory device, memory system, and method using bus-invert encoding
SAMSUNG ELECTRONICS CO LTD2 citations72
US7499310B2Mar 3, 2009
Bit line voltage supply circuit in semiconductor memory device and voltage supplying method therefor
SAMSUNG ELECTRONICS CO LTD7 citations72
US7068058B2Jun 27, 2006
Semiconductor integrated circuit device with test element group circuit
SAMSUNG ELECTRONICS CO LTD7 citations72
US7288966B2Oct 30, 2007
Programmable impedance controller and method for operating
SAMSUNG ELECTRONICS CO LTD8 citations71
US9436545B2Sep 6, 2016
Semiconducotr memory device including non-volatile memory cell array
SAMSUNG ELECTRONICS CO LTD2 citations63
US9147465B2Sep 29, 2015
Circuit for controlling sense amplifier source node in semiconductor memory device and controlling method thereof
SAMSUNG ELECTRONICS CO LTD2 citations63
US6836441B2Dec 28, 2004
Apparatus of repairing memory cell and method therefor
SAMSUNG ELECTRONICS CO LTD2 citations63
US6693831B2Feb 17, 2004
Apparatus of repairing memory cell and method therefor
SAMSUNG ELECTRONICS CO LTD2 citations63
US6678193B2Jan 13, 2004
Apparatus and method for tracking between data and echo clock
SAMSUNG ELECTRONICS CO LTD4 citations63
US7902871B2Mar 8, 2011
Level shifter and semiconductor device having off-chip driver
SAMSUNG ELECTRONICS CO LTD4 citations62
US7548485B2Jun 16, 2009
Semiconductor memory device capable of synchronous/asynchronous operation and data input/output method thereof
SAMSUNG ELECTRONICS CO LTD5 citations61
US10985139B2Apr 20, 2021
Semiconductor chip for sensing temperature and semiconductor system including the same
SAMSUNG ELECTRONICS CO LTD1 citations60
US9830083B2Nov 28, 2017
Memory chip, memory system, and method of accessing the memory chip
SAMSUNG ELECTRONICS CO LTD1 citations52
US9412429B2Aug 9, 2016
Memory device with multiple voltage generators
SAMSUNG ELECTRONICS CO LTD0 citations51
US6949960B2Sep 27, 2005
Semiconductor integrated circuit comprising functional modes
SAMSUNG ELECTRONICS CO LTD0 citations51
US7151710B2Dec 19, 2006
Semiconductor memory device with data input/output organization in multiples of nine bits
SAMSUNG ELECTRONICS CO LTD0 citations50
US6909661B2Jun 21, 2005
Semiconductor memory device with data input/output organization in multiples of nine bits
SAMSUNG ELECTRONICS CO LTD1 citations50
US7340560B2Mar 4, 2008
Methods and devices for accessing a memory using multiple separate address mapped temporary storage areas
SAMSUNG ELECTRONICS CO LTD0 citations44