Inventor

PANDEY SUMEET C

US35 patents

⚠️ This page may combine multiple inventors who share the name “PANDEY SUMEET C”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PANDEY SUMEET C

MICRON TECHNOLOGY INC

Methods of forming silicon nitride by atomic layer deposition and methods of forming semiconductor structures

Memory cells, semiconductor structures, semiconductor devices, and methods of fabrication

Polar, chiral, and non-centro-symmetric ferroelectric materials, memory cells including such materials, and related devices and methods

Methods of forming semiconductor device structures including two-dimensional material structures

Memory cells, semiconductor devices, and methods of fabrication

Memory cells, methods of fabrication, and semiconductor devices

Semiconducting graphene structures, methods of forming such structures and semiconductor devices including such structures

Methods of forming semiconductor devices comprising silicon nitride on high aspect ratio features

Multiferroic magnetic tunnel junction devices

Silicon chalcogenate precursors, methods of forming the silicon chalcogenate precursors, and related methods of forming silicon nitride and semiconductor structures

Devices containing metal chalcogenides

Enhanced charge storage materials, related semiconductor memory cells and semiconductor devices, and related systems and methods

Methods of forming silicon nitride including plasma exposure

Methods of making memory cells

Electronic systems including two-dimensional material structures

Methods of forming electronic devices

Methods for inhibiting line bending during conductive material deposition, and related apparatus

Semiconductor devices including two-dimensional material structures

Apparatus with species on or in conductive material on elongate lines

Transistors comprising an electrolyte, semiconductor devices, electronic systems, and related methods

Methods of forming electronic devices

Silicon chalcogenate precursors comprising a chemical formula of si(XR1)nR24-n and methods of forming the silicon chalcogenate precursors

Integrated assemblies having metal-containing regions coupled with semiconductor regions

Multiferroic magnetic tunnel junction devices

Dielectric materials, capacitors and memory arrays

Magnetic devices with magnetic and getter regions

Electronic devices including magnetic cell core structures

Magnetic memory cells, semiconductor devices, and methods of formation

Magnetic devices with magnetic and getter regions and methods of formation

Semiconductor structures and devices and methods of forming semiconductor structures and magnetic memory cells

Magnetic memory cells and methods of fabrication

Memory cells and methods of making memory cells

Semiconductor graphene structures, semiconductor devices including such structures, and related methods

Memory cells

SANDHU GURTEJ S

Memory cells having-multi-portion data storage region