P

Inventor

CHU RONGMING

US52 patents
⚠️ This page may combine multiple inventors who share the name “CHU RONGMING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HRL LAB LLC

33 patents
US9559012B1Jan 31, 2017

Gallium nitride complementary transistors

HRL LAB LLC29 citations94
US9337332B2May 10, 2016

III-Nitride insulating-gate transistors with passivation

HRL LAB LLC36 citations93
US9142626B1Sep 22, 2015

Stepped field plate wide bandgap field-effect transistor and method

HRL LAB LLC18 citations92
US8941118B1Jan 27, 2015

Normally-off III-nitride transistors with high threshold-voltage and low on-resistance

HRL LAB LLC26 citations92
US9929243B1Mar 27, 2018

Stepped field plate wide bandgap field-effect transistor and method

HRL LAB LLC4 citations84
US9059200B1Jun 16, 2015

III-Nitride metal-insulator-semiconductor field-effect transistor

HRL LAB LLC8 citations84
US10903333B2Jan 26, 2021

Doped gate dielectric materials

HRL LAB LLC6 citations83
US9812532B1Nov 7, 2017

III-nitride P-channel transistor

HRL LAB LLC17 citations83
US9419122B1Aug 16, 2016

Etch-based fabrication process for stepped field-plate wide-bandgap

HRL LAB LLC4 citations83
US9202880B1Dec 1, 2015

Etch-based fabrication process for stepped field-plate wide-bandgap

HRL LAB LLC10 citations83
US9077335B2Jul 7, 2015

Reduction of the inductance of power loop and gate loop in a half-bridge converter with vertical current loops

HRL LAB LLC13 citations82
US10387792B1Aug 20, 2019

Etched spin-qubit for high temperature operation

HRL LAB LLC12 citations80
US10692984B2Jun 23, 2020

III-nitride field-effect transistor with dual gates

HRL LAB LLC4 citations73
US10651306B2May 12, 2020

Digital alloy based back barrier for P-channel nitride transistors

HRL LAB LLC2 citations73
US10276712B2Apr 30, 2019

III-nitride field-effect transistor with dual gates

HRL LAB LLC5 citations73
US9761438B1Sep 12, 2017

Method for manufacturing a semiconductor structure having a passivated III-nitride layer

HRL LAB LLC5 citations73
US10535518B1Jan 14, 2020

In situ fabrication of horizontal nanowires and device using same

HRL LAB LLC1 citations71
US11183573B2Nov 23, 2021

III-nitride field-effect transistor with dual gates

HRL LAB LLC0 citations63
US10943998B2Mar 9, 2021

Digital alloy based back barrier for P-channel nitride transistors

HRL LAB LLC0 citations63
US11437485B2Sep 6, 2022

Doped gate dielectrics materials

HRL LAB LLC0 citations62
US11361965B1Jun 14, 2022

In situ fabrication of horizontal nanowires and device using same

HRL LAB LLC0 citations61
US10937650B1Mar 2, 2021

Semiconductor device having in situ formed horizontal nanowire structure

HRL LAB LLC0 citations61
US10916647B2Feb 9, 2021

FET transistor on a III-V material structure with substrate transfer

HRL LAB LLC0 citations61
US10263104B2Apr 16, 2019

FET transistor on a III-V material structure with substrate transfer

HRL LAB LLC1 citations61
US9773884B2Sep 26, 2017

III-nitride transistor with engineered substrate

HRL LAB LLC2 citations61
US10910793B2Feb 2, 2021

Low modulation-voltage cryogenic diode structure

HRL LAB LLC0 citations59
US10283358B2May 7, 2019

Lateral GaN PN junction diode enabled by sidewall regrowth

HRL LAB LLC0 citations52
US10181400B2Jan 15, 2019

III-Nitride transistor with enhanced doping in base layer

HRL LAB LLC0 citations52
US10153761B2Dec 11, 2018

GaN-on-sapphire monolithically integrated power converter

HRL LAB LLC1 citations52
US9865725B2Jan 9, 2018

III-nitride transistor with trench gate

HRL LAB LLC1 citations52
US9761709B2Sep 12, 2017

III-nitride transistor with enhanced doping in base layer

HRL LAB LLC1 citations52
US10134851B2Nov 20, 2018

Tunnel barrier schottky

HRL LAB LLC0 citations51
US9899482B2Feb 20, 2018

Tunnel barrier schottky

HRL LAB LLC0 citations51

TRANSPHORM INC

9 patents

CHU RONGMING

6 patents

WU YIFENG

1 patent

CORRION ANDREA

1 patent

Showing the top 50 of 52 patents by PatentIndex Score.