Inventor
CHU RONGMING
US52 patents
⚠️ This page may combine multiple inventors who share the name “CHU RONGMING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HRL LAB LLC
33 patentsUS9559012B1Jan 31, 2017
Gallium nitride complementary transistors
HRL LAB LLC29 citations94
US9337332B2May 10, 2016
III-Nitride insulating-gate transistors with passivation
HRL LAB LLC36 citations93
US9142626B1Sep 22, 2015
Stepped field plate wide bandgap field-effect transistor and method
HRL LAB LLC18 citations92
US8941118B1Jan 27, 2015
Normally-off III-nitride transistors with high threshold-voltage and low on-resistance
HRL LAB LLC26 citations92
US9929243B1Mar 27, 2018
Stepped field plate wide bandgap field-effect transistor and method
HRL LAB LLC4 citations84
US9059200B1Jun 16, 2015
III-Nitride metal-insulator-semiconductor field-effect transistor
HRL LAB LLC8 citations84
US10903333B2Jan 26, 2021
Doped gate dielectric materials
HRL LAB LLC6 citations83
US9812532B1Nov 7, 2017
III-nitride P-channel transistor
HRL LAB LLC17 citations83
US9419122B1Aug 16, 2016
Etch-based fabrication process for stepped field-plate wide-bandgap
HRL LAB LLC4 citations83
US9202880B1Dec 1, 2015
Etch-based fabrication process for stepped field-plate wide-bandgap
HRL LAB LLC10 citations83
US9077335B2Jul 7, 2015
Reduction of the inductance of power loop and gate loop in a half-bridge converter with vertical current loops
HRL LAB LLC13 citations82
US10387792B1Aug 20, 2019
Etched spin-qubit for high temperature operation
HRL LAB LLC12 citations80
US10692984B2Jun 23, 2020
III-nitride field-effect transistor with dual gates
HRL LAB LLC4 citations73
US10651306B2May 12, 2020
Digital alloy based back barrier for P-channel nitride transistors
HRL LAB LLC2 citations73
US10276712B2Apr 30, 2019
III-nitride field-effect transistor with dual gates
HRL LAB LLC5 citations73
US9761438B1Sep 12, 2017
Method for manufacturing a semiconductor structure having a passivated III-nitride layer
HRL LAB LLC5 citations73
US10535518B1Jan 14, 2020
In situ fabrication of horizontal nanowires and device using same
HRL LAB LLC1 citations71
US11183573B2Nov 23, 2021
III-nitride field-effect transistor with dual gates
HRL LAB LLC0 citations63
US10943998B2Mar 9, 2021
Digital alloy based back barrier for P-channel nitride transistors
HRL LAB LLC0 citations63
US11437485B2Sep 6, 2022
Doped gate dielectrics materials
HRL LAB LLC0 citations62
US11361965B1Jun 14, 2022
In situ fabrication of horizontal nanowires and device using same
HRL LAB LLC0 citations61
US10937650B1Mar 2, 2021
Semiconductor device having in situ formed horizontal nanowire structure
HRL LAB LLC0 citations61
US10916647B2Feb 9, 2021
FET transistor on a III-V material structure with substrate transfer
HRL LAB LLC0 citations61
US10263104B2Apr 16, 2019
FET transistor on a III-V material structure with substrate transfer
HRL LAB LLC1 citations61
US9773884B2Sep 26, 2017
III-nitride transistor with engineered substrate
HRL LAB LLC2 citations61
US10910793B2Feb 2, 2021
Low modulation-voltage cryogenic diode structure
HRL LAB LLC0 citations59
US10283358B2May 7, 2019
Lateral GaN PN junction diode enabled by sidewall regrowth
HRL LAB LLC0 citations52
US10181400B2Jan 15, 2019
III-Nitride transistor with enhanced doping in base layer
HRL LAB LLC0 citations52
US10153761B2Dec 11, 2018
GaN-on-sapphire monolithically integrated power converter
HRL LAB LLC1 citations52
US9865725B2Jan 9, 2018
III-nitride transistor with trench gate
HRL LAB LLC1 citations52
US9761709B2Sep 12, 2017
III-nitride transistor with enhanced doping in base layer
HRL LAB LLC1 citations52
US10134851B2Nov 20, 2018
Tunnel barrier schottky
HRL LAB LLC0 citations51
US9899482B2Feb 20, 2018
Tunnel barrier schottky
HRL LAB LLC0 citations51
TRANSPHORM INC
9 patentsUS7898004B2Mar 1, 2011
Semiconductor heterostructure diodes
TRANSPHORM INC139 citations99
US8692294B2Apr 8, 2014
Semiconductor devices with field plates
TRANSPHORM INC43 citations98
US7884394B2Feb 8, 2011
III-nitride devices and circuits
TRANSPHORM INC69 citations98
US9831315B2Nov 28, 2017
Semiconductor devices with field plates
TRANSPHORM INC14 citations92
US9496137B2Nov 15, 2016
Methods of forming reverse side engineered III-nitride devices
TRANSPHORM INC15 citations92
US9373699B2Jun 21, 2016
Semiconductor devices with field plates
TRANSPHORM INC16 citations92
US9111961B2Aug 18, 2015
Semiconductor devices with field plates
TRANSPHORM INC15 citations92
US9041065B2May 26, 2015
Semiconductor heterostructure diodes
TRANSPHORM INC7 citations84
US10199217B2Feb 5, 2019
Methods of forming reverse side engineered III-nitride devices
TRANSPHORM INC1 citations73
CHU RONGMING
6 patentsUS8389977B2Mar 5, 2013
Reverse side engineered III-nitride devices
CHU RONGMING42 citations97
US8390000B2Mar 5, 2013
Semiconductor devices with field plates
CHU RONGMING73 citations97
US8530978B1Sep 10, 2013
High current high voltage GaN field effect transistors and method of fabricating same
CHU RONGMING58 citations94
US8853709B2Oct 7, 2014
III-nitride metal insulator semiconductor field effect transistor
CHU RONGMING12 citations83
US9691909B2Jun 27, 2017
Current aperture diode and method of fabricating the same
CHU RONGMING0 citations52
US9117935B2Aug 25, 2015
Current aperture diode and method of fabricating same
CHU RONGMING1 citations52
WU YIFENG
1 patentCORRION ANDREA
1 patentShowing the top 50 of 52 patents by PatentIndex Score.