Inventor
THORUP PAUL
US16 patents
⚠️ This page may combine multiple inventors who share the name “THORUP PAUL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FAIRCHILD SEMICONDUCTOR
6 patentsUS7319256B1Jan 15, 2008
Shielded gate trench FET with the shield and gate electrodes being connected together
FAIRCHILD SEMICONDUCTOR105 citations98
US7446374B2Nov 4, 2008
High density trench FET with integrated Schottky diode and method of manufacture
FAIRCHILD SEMICONDUCTOR78 citations97
US7473603B2Jan 6, 2009
Method for forming a shielded gate trench FET with the shield and gate electrodes being connected together
FAIRCHILD SEMICONDUCTOR37 citations96
US7859047B2Dec 28, 2010
Shielded gate trench FET with the shield and gate electrodes connected together in non-active region
FAIRCHILD SEMICONDUCTOR34 citations92
US7713822B2May 11, 2010
Method of forming high density trench FET with integrated Schottky diode
FAIRCHILD SEMICONDUCTOR31 citations92
US7952141B2May 31, 2011
Shield contacts in a shielded gate MOSFET
FAIRCHILD SEMICONDUCTOR4 citations59
ALPHA & OMEGA SEMICONDUCTOR
4 patentsUS9281368B1Mar 8, 2016
Split-gate trench power MOSFET with protected shield oxide
ALPHA & OMEGA SEMICONDUCTOR20 citations92
US9865694B2Jan 9, 2018
Split-gate trench power mosfet with protected shield oxide
ALPHA & OMEGA SEMICONDUCTOR4 citations72
US9741808B2Aug 22, 2017
Split-gate trench power MOSFET with protected shield oxide
ALPHA & OMEGA SEMICONDUCTOR3 citations72
US10032728B2Jul 24, 2018
Trench MOSFET device and the preparation method thereof
ALPHA & OMEGA SEMICONDUCTOR1 citations52
ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
2 patentsUS10020380B2Jul 10, 2018
Power device with high aspect ratio trench contacts and submicron pitches between trenches
ALPHA & OMEGA SEMICONDUCTOR INCORPORATED5 citations72
US10424654B2Sep 24, 2019
Power device with high aspect ratio trench contacts and submicron pitches between trenches
ALPHA & OMEGA SEMICONDUCTOR INCORPORATED1 citations61