P

Inventor

HUANG CHING-YU

US34 patents
⚠️ This page may combine multiple inventors who share the name “HUANG CHING-YU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

23 patents
US10510861B1Dec 17, 2019

Gaseous spacer and methods of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD11 citations82
US12003242B2Jun 4, 2024

Integrated circuit having latch with transistors of different gate widths

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11929319B2Mar 12, 2024

Integrated fan-out packages and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11393674B2Jul 19, 2022

Forming low-stress silicon nitride layer through hydrogen treatment

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11335666B2May 17, 2022

Memory device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11075159B2Jul 27, 2021

Integrated fan-out packages and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10879170B2Dec 29, 2020

Semiconductor package and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US10868131B2Dec 15, 2020

Gaseous spacer and methods of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12261116B2Mar 25, 2025

Backside signal routing

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations64
US12476197B2Nov 18, 2025

Semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12388428B2Aug 12, 2025

Integrated circuit having latch with transistors of different gate widths

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12265775B2Apr 1, 2025

Semiconductor device with reduced power

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12261036B2Mar 25, 2025

Forming low-stress silicon nitride layer through hydrogen treatment

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12205888B2Jan 21, 2025

Semiconductor packages and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12148735B2Nov 19, 2024

Memory device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11830727B2Nov 28, 2023

Forming low-stress silicon nitride layer through hydrogen treatment

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11797745B2Oct 24, 2023

Semiconductor device with reduced power and method of manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12125911B2Oct 22, 2024

Method of modulating stress of dielectric layers

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11502196B2Nov 15, 2022

Stress modulation for dielectric layers

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12414344B2Sep 9, 2025

Semiconductor device having active regions of different dimensions and method of manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US10720526B2Jul 21, 2020

Stress modulation for dielectric layers

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12581745B2Mar 17, 2026

Integrated circuit and system for fabricating the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US12314650B2May 27, 2025

Integrated circuit device and manufacturing method of the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50

HUANG CHING YU

2 patents

GEN PLASTIC IND CO LTD

2 patents

ENSEMBLE GROUP HOLDINGS

2 patents

IND TECH RES INST

2 patents

(unassigned)

1 patent

TAIWAN SEMICONDUCTOR MFG

1 patent

AU OPTRONICS CORP

1 patent