Inventor
WU CHIA-YANG
TW17 patents
⚠️ This page may combine multiple inventors who share the name “WU CHIA-YANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
15 patentsUS10629708B2Apr 21, 2020
Semiconductor device structure with barrier layer and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations83
US9947753B2Apr 17, 2018
Semiconductor structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations83
US10886226B2Jan 5, 2021
Conductive contact having staircase barrier layers
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10714576B2Jul 14, 2020
Semiconductor device and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US12507458B2Dec 23, 2025
Semiconductor device with dielectric spacer liner on source/drain contact
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11670690B2Jun 6, 2023
Semiconductor device with dielectric spacer liner on source/drain contact
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12046662B2Jul 23, 2024
Semiconductor device structure with barrier layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11929328B2Mar 12, 2024
Conductive contact having barrier layers with different depths
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US11784240B2Oct 10, 2023
Semiconductor device structure with barrier layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11670704B2Jun 6, 2023
Semiconductor device structure with barrier layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11031488B2Jun 8, 2021
Semiconductor device structure with barrier layer and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11270888B2Mar 8, 2022
Semiconductor device having source/drain with a protrusion
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US10658186B2May 19, 2020
Method of forming semiconductor device using titanium-containing layer and device formed
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
US10163643B2Dec 25, 2018
Method of forming semiconductor device using titanium-containing layer and device formed
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
US10763338B2Sep 1, 2020
Silicide implants
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations46