Inventor
KWAN MAN-HO
HK18 patents
⚠️ This page may combine multiple inventors who share the name “KWAN MAN-HO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
17 patentsUS10411681B2Sep 10, 2019
Semiconductor device and circuit protecting method
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US9882553B2Jan 30, 2018
Semiconductor device and circuit protecting method
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US11854909B2Dec 26, 2023
Semiconductor structure and method for manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11824109B2Nov 21, 2023
Integration of p-channel and n-channel E-FET III-V devices with optimization of device performance
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11522077B2Dec 6, 2022
Integration of p-channel and n-channel E-FET III-V devices with optimization of device performance
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10319644B2Jun 11, 2019
Method for manufacturing semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10276657B2Apr 30, 2019
Isolation structure for active devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US9627275B1Apr 18, 2017
Hybrid semiconductor structure on a common substrate
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10068976B2Sep 4, 2018
Enhancement mode field-effect transistor with a gate dielectric layer recessed on a composite barrier layer for high static performance
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12563819B2Feb 24, 2026
Semiconductor structure and method for manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12272741B2Apr 8, 2025
Integration of p-channel and n-channel E-FET III-V devices with optimization of device performance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11843047B2Dec 12, 2023
Integration of p-channel and n-channel E-FET III-V devices without parasitic channels
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11705486B2Jul 18, 2023
Isolation structure for active devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11430702B2Aug 30, 2022
Semiconductor structure and method for manufacturing thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11349023B2May 31, 2022
Integration of p-channel and n-channel E-FET III-V devices without parasitic channels
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10854711B2Dec 1, 2020
Isolation structure for active devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10522618B2Dec 31, 2019
Isolation structure for active devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52