Inventor
IGAHARA SHUNICHI
JP25 patents
⚠️ This page may combine multiple inventors who share the name “IGAHARA SHUNICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
KIOXIA CORP
19 patentsUS11734112B2Aug 22, 2023
Memory system
KIOXIA CORP2 citations73
US11733888B2Aug 22, 2023
Memory system
KIOXIA CORP1 citations73
US11442808B2Sep 13, 2022
Memory system
KIOXIA CORP2 citations73
US11194656B2Dec 7, 2021
Memory system
KIOXIA CORP3 citations73
US11042310B2Jun 22, 2021
Reading of start-up information from different memory regions of a memory system
KIOXIA CORP2 citations73
US12086439B2Sep 10, 2024
Memory storage with selected performance mode
KIOXIA CORP0 citations62
US11749350B2Sep 5, 2023
Semiconductor memory medium and memory system
KIOXIA CORP0 citations62
US11740965B2Aug 29, 2023
Memory system
KIOXIA CORP0 citations62
US11727998B2Aug 15, 2023
Memory system and memory control method
KIOXIA CORP0 citations62
US11615851B2Mar 28, 2023
Semiconductor memory medium and memory system
KIOXIA CORP0 citations62
US11355197B2Jun 7, 2022
Memory system with nonvolatile cache and control method thereof
KIOXIA CORP0 citations62
US11342026B2May 24, 2022
Semiconductor memory medium and memory system
KIOXIA CORP0 citations62
US12547321B2Feb 10, 2026
Memory system and method of controlling nonvolatile memory
KIOXIA CORP0 citations52
US12293106B2May 6, 2025
Storage device, storage system, and control method
KIOXIA CORP0 citations52
US12170118B2Dec 17, 2024
Memory system
KIOXIA CORP0 citations52
US11954357B2Apr 9, 2024
Memory system and memory system control method
KIOXIA CORP0 citations52
US11789643B2Oct 17, 2023
Memory system and control method
KIOXIA CORP0 citations52
US11436136B2Sep 6, 2022
Memory system including non-volatile buffer and control method thereof
KIOXIA CORP0 citations52
US12547539B2Feb 10, 2026
Memory system and memory device
KIOXIA CORP0 citations47
TOSHIBA MEMORY CORP
6 patentsUS10824353B2Nov 3, 2020
Memory system
TOSHIBA MEMORY CORP5 citations84
US10614888B2Apr 7, 2020
Memory system that selectively writes in single-level cell mode or multi-level cell mode to reduce program/erase cycles
TOSHIBA MEMORY CORP4 citations73
US10437490B2Oct 8, 2019
Reading of start-up information from different memory regions of a memory system
TOSHIBA MEMORY CORP3 citations73
US11189353B2Nov 30, 2021
Memory system and memory control method
TOSHIBA MEMORY CORP2 citations72
US10854302B2Dec 1, 2020
Memory system and memory control method
TOSHIBA MEMORY CORP4 citations72
US10216644B2Feb 26, 2019
Memory system and method
TOSHIBA MEMORY CORP0 citations41