Inventor

MUN SEONG YEOL

US31 patents

⚠️ This page may combine multiple inventors who share the name “MUN SEONG YEOL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MUN SEONG YEOL

OMNIVISION TECH INC

Pillar structures for suppressing optical cross-talk

Isolation structure for suppressing floating diffusion junction leakage in CMOS image sensor

Transistor having increased effective channel width

CMOS image sensor having front side and back side trench isolation structures enclosing pixel regions and a capacitor for storing the image charge

Reduced cross-talk pixel-array substrate and fabrication method

Method for forming LED flickering reduction (LFR) film for HDR image sensor and image sensor having same

Transistors having increased effective channel width

Transistors having increased effective channel width

Isolation structure for suppression floating diffusion junction leakage in CMOS image sensor

Image sensor with varying depth deep trench isolation structure for reduced crosstalk

Suppressed cross-talk pixel-array substrate and fabrication method

Transistor having increased effective channel width

CMOS image sensor with LED flickering reduction and low color cross-talk

Method of forming shallow trench isolation (STI) structure for suppressing dark current

Metal grid structure integrated with deep trench isolation structure

High dynamic range split pixel CMOS image sensor with low color crosstalk

Shallow trench isolation (STI) structure for suppressing dark current and method of forming

Dark-current inhibiting image sensor and method

SiGe photodiode for crosstalk reduction

Image sensor with elevated floating diffusion

Shallow trench isolation (STI) structure for CMOS image sensor

Selective nitrided gate-oxide for RTS noise and white-pixel reduction

Shallow trench isolation (STI) structure for CMOS image sensor

Image sensor with fully depleted silicon on insulator substrate

Image sensor with split pixel structure and method of manufacturing thereof

GLOBALFOUNDRIES INC

Fabrication methods facilitating integration of different device architectures

Vertically oriented metal silicide containing e-fuse device and methods of making same

Triple gate technology for 14 nanometer and onwards

Vertically oriented metal silicide containing e-fuse device

HYUNDAI ELECTRONICS IND

System for etching polysilicon in fabricating semiconductor device

MAGNACHIP SEMICONDUCTOR LTD

Method for fabricating semiconductor device