Inventor
CHENG CHUN-FU
TW39 patents
⚠️ This page may combine multiple inventors who share the name “CHENG CHUN-FU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
35 patentsUS10672742B2Jun 2, 2020
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations83
US9455346B2Sep 27, 2016
Channel strain inducing architecture and doping technique at replacement poly gate (RPG) stage
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations82
US11569348B2Jan 31, 2023
Semiconductor devices and methods of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations74
US11532627B2Dec 20, 2022
Source/drain contact structure
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US11489063B2Nov 1, 2022
Method of manufacturing a source/drain feature in a multi-gate semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11469332B2Oct 11, 2022
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11309240B2Apr 19, 2022
Conductive rail structure for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11037925B2Jun 15, 2021
Structure and method of integrated circuit having decouple capacitance
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11264270B2Mar 1, 2022
Air-replaced spacer for self-aligned contact scheme
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11152338B2Oct 19, 2021
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US9659776B2May 23, 2017
Doping for FinFET
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10276717B2Apr 30, 2019
Channel strain inducing architecture and doping technique at replacement poly gate (RPG) stage
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations71
US12550393B2Feb 10, 2026
Semiconductor devices and methods of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12520577B2Jan 6, 2026
Complementary field effect transistor with hybrid nanostructure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12349418B2Jul 1, 2025
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12310029B2May 20, 2025
Semiconductor memory device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12211790B2Jan 28, 2025
Conductive rail structure for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12199170B2Jan 14, 2025
Method of manufacturing a multi-gate device having a semiconductor seed layer embedded in an isolation layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12040222B2Jul 16, 2024
Air-replaced spacer for self-aligned contact scheme
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12034044B2Jul 9, 2024
Semiconductor devices and methods of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12009408B2Jun 11, 2024
Multi-gate devices having a semiconductor layer between an inner spacer and an epitaxial feature
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11929409B2Mar 12, 2024
Semiconductor device with improved source and drain contact area and methods of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11837538B2Dec 5, 2023
Conductive rail structure for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11756959B2Sep 12, 2023
Structure and method of integrated circuit having decouple capacitance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11716857B2Aug 1, 2023
Semiconductor memory device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11476342B1Oct 18, 2022
Semiconductor device with improved source and drain contact area and methods of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US10516047B2Dec 24, 2019
Structure and formation method of semiconductor device structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12334350B2Jun 17, 2025
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12501660B2Dec 16, 2025
Field effect transistor with merged epitaxy backside cut and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12250822B2Mar 11, 2025
Three-dimensional memory device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US11855143B2Dec 26, 2023
Semiconductor structures and methods thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US11723209B2Aug 8, 2023
Three-dimensional memory device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9502253B2Nov 22, 2016
Method of manufacturing an integrated circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10861972B2Dec 8, 2020
Channel strain inducing architecture and doping technique at replacement poly gate (RPG) stage
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US12432954B2Sep 30, 2025
Semiconductor device structure with fin and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations48