P

Inventor

CHENG CHUN-FU

TW39 patents
⚠️ This page may combine multiple inventors who share the name “CHENG CHUN-FU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

35 patents
US10672742B2Jun 2, 2020

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations83
US9455346B2Sep 27, 2016

Channel strain inducing architecture and doping technique at replacement poly gate (RPG) stage

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations82
US11569348B2Jan 31, 2023

Semiconductor devices and methods of fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations74
US11532627B2Dec 20, 2022

Source/drain contact structure

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US11489063B2Nov 1, 2022

Method of manufacturing a source/drain feature in a multi-gate semiconductor structure

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11469332B2Oct 11, 2022

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11309240B2Apr 19, 2022

Conductive rail structure for semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11037925B2Jun 15, 2021

Structure and method of integrated circuit having decouple capacitance

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11264270B2Mar 1, 2022

Air-replaced spacer for self-aligned contact scheme

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11152338B2Oct 19, 2021

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US9659776B2May 23, 2017

Doping for FinFET

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10276717B2Apr 30, 2019

Channel strain inducing architecture and doping technique at replacement poly gate (RPG) stage

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations71
US12550393B2Feb 10, 2026

Semiconductor devices and methods of fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12520577B2Jan 6, 2026

Complementary field effect transistor with hybrid nanostructure

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12349418B2Jul 1, 2025

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12310029B2May 20, 2025

Semiconductor memory device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12211790B2Jan 28, 2025

Conductive rail structure for semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12199170B2Jan 14, 2025

Method of manufacturing a multi-gate device having a semiconductor seed layer embedded in an isolation layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12040222B2Jul 16, 2024

Air-replaced spacer for self-aligned contact scheme

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12034044B2Jul 9, 2024

Semiconductor devices and methods of fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12009408B2Jun 11, 2024

Multi-gate devices having a semiconductor layer between an inner spacer and an epitaxial feature

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11929409B2Mar 12, 2024

Semiconductor device with improved source and drain contact area and methods of fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11837538B2Dec 5, 2023

Conductive rail structure for semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11756959B2Sep 12, 2023

Structure and method of integrated circuit having decouple capacitance

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11716857B2Aug 1, 2023

Semiconductor memory device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11476342B1Oct 18, 2022

Semiconductor device with improved source and drain contact area and methods of fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US10516047B2Dec 24, 2019

Structure and formation method of semiconductor device structure

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12334350B2Jun 17, 2025

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12501660B2Dec 16, 2025

Field effect transistor with merged epitaxy backside cut and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12250822B2Mar 11, 2025

Three-dimensional memory device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US11855143B2Dec 26, 2023

Semiconductor structures and methods thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US11723209B2Aug 8, 2023

Three-dimensional memory device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9502253B2Nov 22, 2016

Method of manufacturing an integrated circuit

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10861972B2Dec 8, 2020

Channel strain inducing architecture and doping technique at replacement poly gate (RPG) stage

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US12432954B2Sep 30, 2025

Semiconductor device structure with fin and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations48

TAIWAN SEMICONDUCTOR MFG

2 patents

WU ZHIQIANG

1 patent

HUANG YU-LIEN

1 patent