Inventor
ISO KENJI
JP20 patents
⚠️ This page may combine multiple inventors who share the name “ISO KENJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI CHEM CORP
8 patentsUS11987903B2May 21, 2024
N-type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitride semiconductor device production method
MITSUBISHI CHEM CORP3 citations73
US12351943B2Jul 8, 2025
n-Type GaN crystal, GaN wafer, and GaN crystal, GaN wafer and nitride semiconductor device production method
MITSUBISHI CHEM CORP1 citations63
US11371140B2Jun 28, 2022
Method for producing GaN crystal
MITSUBISHI CHEM CORP0 citations62
US10961619B2Mar 30, 2021
Method for producing GaN crystal
MITSUBISHI CHEM CORP1 citations62
US12288686B2Apr 29, 2025
GaN substrate wafer and method for manufacturing same
MITSUBISHI CHEM CORP0 citations61
US12476108B2Nov 18, 2025
GaN substrate wafer and production method for same
MITSUBISHI CHEM CORP0 citations60
US10224201B2Mar 5, 2019
C-plane GaN substrate
MITSUBISHI CHEM CORP0 citations50
US10177217B2Jan 8, 2019
C-plane GaN substrate
MITSUBISHI CHEM CORP0 citations40
UNIV CALIFORNIA
6 patentsUS8368109B2Feb 5, 2013
Light emitting diodes with a p-type surface bonded to a transparent submount to increase light extraction efficiency
UNIV CALIFORNIA9 citations84
US7847280B2Dec 7, 2010
Nonpolar III-nitride light emitting diodes with long wavelength emission
UNIV CALIFORNIA10 citations84
US8044417B2Oct 25, 2011
Enhancement of optical polarization of nitride light-emitting diodes by increased indium incorporation
UNIV CALIFORNIA6 citations74
US9828695B2Nov 28, 2017
Planar nonpolar group-III nitride films grown on miscut substrates
UNIV CALIFORNIA0 citations51
US9340899B2May 17, 2016
Planar nonpolar group-III nitride films grown on miscut substrates
UNIV CALIFORNIA0 citations51
US8791000B2Jul 29, 2014
Planar nonpolar group-III nitride films grown on miscut substrates
UNIV CALIFORNIA0 citations51