Inventor
OHJI YUZURU
JP22 patents
⚠️ This page may combine multiple inventors who share the name “OHJI YUZURU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HITACHI LTD
20 patentsUS5188976AFeb 23, 1993
Manufacturing method of non-volatile semiconductor memory device
HITACHI LTD120 citations98
US6451665B1Sep 17, 2002
Method of manufacturing a semiconductor integrated circuit
HITACHI LTD66 citations96
US6326218B1Dec 4, 2001
Semiconductor integrated circuit and its manufacturing method
HITACHI LTD46 citations96
US6255151B1Jul 3, 2001
Semiconductor integrated circuit device and method of manufacturing same
HITACHI LTD81 citations96
US5499207AMar 12, 1996
Semiconductor memory device having improved isolation between electrodes, and process for fabricating the same
HITACHI LTD86 citations96
US6756262B1Jun 29, 2004
Semiconductor integrated circuit device having spaced-apart electrodes and the method thereof
HITACHI LTD46 citations92
US6576946B1Jun 10, 2003
Semiconductor device comprising capacitor cells, bit lines, word lines, and MOS transistors in a memory cell area over a semiconductor substrate
HITACHI LTD24 citations92
US6426255B1Jul 30, 2002
Process for making a semiconductor integrated circuit device having a dynamic random access memory
HITACHI LTD23 citations92
US6423992B2Jul 23, 2002
Semiconductor integrated circuit device
HITACHI LTD35 citations92
US5736449AApr 7, 1998
Semiconductor memory device having improved isolation between electrodes, and process for fabricating the same
HITACHI LTD17 citations92
US5343353AAug 30, 1994
Semiconductor device and process of producing the same
HITACHI LTD27 citations92
US4907046AMar 6, 1990
Semiconductor device with multilayer silicon oxide silicon nitride dielectric
HITACHI LTD39 citations92
US6524927B1Feb 25, 2003
Semiconductor device and method of fabricating the same
HITACHI LTD17 citations91
US6534375B2Mar 18, 2003
Method of forming a capacitor in a semiconductor integrated circuit device using a metal silicon nitride layer to protect an underlying metal silicide layer from oxidation during subsequent processing steps
HITACHI LTD14 citations83
US6781172B2Aug 24, 2004
Semiconductor device with adhesion-improvement capacitor and process for producing the device
HITACHI LTD6 citations74
US4563900AJan 14, 1986
Acoustic microscope
HITACHI LTD12 citations74
US6720603B2Apr 13, 2004
Capacitor structure and a semiconductor device with a first metal layer, a second metal silicide layer formed over the first metal layer and a second metal layer formed over the second metal silicide layer
HITACHI LTD11 citations73
US6627497B2Sep 30, 2003
Semiconductor integrated circuit device and method of manufacturing the same
HITACHI LTD7 citations71
US6583463B1Jun 24, 2003
Semiconductor integrated circuit device with information storage capacitor having ruthenium dioxide lower electrode and crystallized TA2O5 capacitor insulator
HITACHI LTD6 citations71
US6927439B2Aug 9, 2005
Semiconductor memory with strongly adhesive electrode
HITACHI LTD0 citations52