Inventor

MIYAO MASANOBU

JP30 patents

⚠️ This page may combine multiple inventors who share the name “MIYAO MASANOBU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MIYAO MASANOBU

HITACHI LTD

Transistor provided with strained germanium layer

Semiconductor memory and method of producing the same

Dram with FET stacked over capacitor

Method of producing single-crystal silicon film

Method of producing single crystal film utilizing a two-step heat treatment

Semiconductor memory with trench capacitor

Semiconductor memory

Electronic apparatus having semiconductor device including plurality of transistors formed on a polycrystalline layered structure in which the number of crystal grains in each polycrystalline layer is gradually reduced from lower to upper layer

SOI process for forming a thin film transistor using solid phase epitaxy

Method of manufacturing single-crystal film

Stacked polycrystalline silicon film of high and low conductivity layers

Semiconductor device, method of making the same and liquid crystal display device

Semiconductor device with buried side contact

Semiconductor memory

Semiconductor memory

Semiconductor memory and method of producing the same

Vertical MOSFET DRAM

Three-dimensional semiconductor device with thin film monocrystalline member contacting substrate at a plurality of locations

Method of producing a semiconductor device

Optical communication equipment and system

Solid-state imaging device

Electronic apparatus having polycrystalline semiconductor thin film structure

Semiconductor device

Semiconductor device, method of making the same and liquid crystal display device

SUMCO CORP

Method for producing strained Si-SOI substrate and strained Si-SOI substrate produced by the same

Method for manufacturing semiconductor wafer including a strained silicon layer

AGENCY IND SCIENCE TECHN

Method of producing hetero structure

RENESAS TECH CORP

Semiconductor device and semiconductor substrate

SUGII NOBUYUKI

Semiconductor device and semiconductor substrate having selectively etched portions filled with silicon germanium

MIYAO MASANOBU

Semiconductor device including a plurality of different functional elements and method of manufacturing the same