Inventor
SAGEHASHI MASAYOSHI
JP73 patents
⚠️ This page may combine multiple inventors who share the name “SAGEHASHI MASAYOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SHINETSU CHEMICAL CO
42 patentsUS9250518B2Feb 2, 2016
Resist composition and patterning process
SHINETSU CHEMICAL CO35 citations94
US10303056B2May 28, 2019
Resist composition and patterning process
SHINETSU CHEMICAL CO11 citations84
US9316915B2Apr 19, 2016
Negative resist composition and pattern forming process
SHINETSU CHEMICAL CO8 citations84
US9017922B2Apr 28, 2015
Chemically amplified resist composition and patterning process
SHINETSU CHEMICAL CO8 citations84
US11009793B2May 18, 2021
Monomer, polymer, resist composition, and patterning process
SHINETSU CHEMICAL CO4 citations73
US10457779B2Oct 29, 2019
Tetracarboxylic acid diester compound, polyimide precursor polymer and method for producing the same, negative photosensitive resin composition, positive photosensitive resin composition, patterning process, and method for forming cured film
SHINETSU CHEMICAL CO4 citations73
US10216085B2Feb 26, 2019
Tetracarboxylic acid diester compound, polyimide precursor polymer and method for producing the same, negative photosensitive resin composition, patterning process, and method for forming cured film
SHINETSU CHEMICAL CO2 citations73
US10126649B2Nov 13, 2018
Resist composition and patterning process using the same
SHINETSU CHEMICAL CO4 citations73
US10023674B2Jul 17, 2018
Monomer, polymer, resist composition, and patterning process
SHINETSU CHEMICAL CO3 citations73
US9740100B2Aug 22, 2017
Hemiacetal compound, polymer, resist composition, and patterning process
SHINETSU CHEMICAL CO2 citations73
US9657115B2May 23, 2017
Polymer compound for a conductive polymer and method for manufacturing same
SHINETSU CHEMICAL CO2 citations73
US9429846B2Aug 30, 2016
Pattern forming process and shrink agent
SHINETSU CHEMICAL CO6 citations73
US9335633B2May 10, 2016
Positive resist composition and patterning process
SHINETSU CHEMICAL CO3 citations73
US9244350B2Jan 26, 2016
Positive resist composition and patterning process
SHINETSU CHEMICAL CO4 citations73
US9182668B2Nov 10, 2015
Patterning process, resist composition, polymer, and monomer
SHINETSU CHEMICAL CO4 citations73
US10131730B2Nov 20, 2018
Resist composition and patterning process
SHINETSU CHEMICAL CO2 citations72
US9081290B2Jul 14, 2015
Patterning process and resist composition
SHINETSU CHEMICAL CO6 citations72
US9366963B2Jun 14, 2016
Resist composition and pattern forming process
SHINETSU CHEMICAL CO2 citations63
US9256127B2Feb 9, 2016
Monomer, polymer, resist composition, and patterning process
SHINETSU CHEMICAL CO2 citations63
US9250517B2Feb 2, 2016
Polymer, positive resist composition and patterning process
SHINETSU CHEMICAL CO2 citations63
US9213235B2Dec 15, 2015
Patterning process, resist composition, polymer, and monomer
SHINETSU CHEMICAL CO2 citations63
US8900796B2Dec 2, 2014
Acid generator, chemically amplified resist composition, and patterning process
SHINETSU CHEMICAL CO3 citations63
US12013639B2Jun 18, 2024
Positive resist material and patterning process
SHINETSU CHEMICAL CO1 citations62
US11548844B2Jan 10, 2023
Monomer, polymer, negative resist composition, photomask blank, and resist pattern forming process
SHINETSU CHEMICAL CO1 citations62
US11492337B2Nov 8, 2022
Epoxy compound, resist composition, and pattern forming process
SHINETSU CHEMICAL CO0 citations62
US9115074B2Aug 25, 2015
Fluorinated monomer, polymer, resist composition, and patterning process
SHINETSU CHEMICAL CO2 citations62
US11435666B2Sep 6, 2022
Salt compound, chemically amplified resist composition, and patterning process
SHINETSU CHEMICAL CO1 citations55
US12275693B2Apr 15, 2025
Onium salt, chemically amplified resist composition and patterning process
SHINETSU CHEMICAL CO0 citations52
US11579529B2Feb 14, 2023
Positive resist composition and patterning process
SHINETSU CHEMICAL CO0 citations52
US11286320B2Mar 29, 2022
Polymerizable monomer, polymer compound for conductive polymer, and method for producing the polymer compound
SHINETSU CHEMICAL CO0 citations52
US10591819B2Mar 17, 2020
Monomer, polymer, resist composition, and patterning process
SHINETSU CHEMICAL CO0 citations52
US10527939B2Jan 7, 2020
Monomer, polymer, resist composition, and patterning process
SHINETSU CHEMICAL CO0 citations52
US9810983B2Nov 7, 2017
Polymer, chemically amplified positive resist composition and patterning process
SHINETSU CHEMICAL CO0 citations52
US9709890B2Jul 18, 2017
Resist composition and patterning process
SHINETSU CHEMICAL CO1 citations52
US9632415B2Apr 25, 2017
Pattern forming process and shrink agent
SHINETSU CHEMICAL CO1 citations52
US9527937B2Dec 27, 2016
Polymer compound for a conductive polymer and method for producing same
SHINETSU CHEMICAL CO0 citations52
US9458144B2Oct 4, 2016
Monomer, polymer, resist composition, and patterning process
SHINETSU CHEMICAL CO1 citations52
US9250522B2Feb 2, 2016
Positive resist composition and patterning process
SHINETSU CHEMICAL CO1 citations52
US9235122B2Jan 12, 2016
Monomer, polymer, resist composition, and patterning process
SHINETSU CHEMICAL CO0 citations52
US9122155B2Sep 1, 2015
Sulfonium salt, resist composition and patterning process
SHINETSU CHEMICAL CO1 citations52
US9086624B2Jul 21, 2015
Monomer, polymer, resist composition, and patterning process
SHINETSU CHEMICAL CO1 citations52
US9063413B2Jun 23, 2015
Resist composition, patterning process, monomer, and copolymer
SHINETSU CHEMICAL CO0 citations52
HATAKEYAMA JUN
2 patentsSAGEHASHI MASAYOSHI
2 patentsKOBAYASHI TOMOHIRO
1 patentOHSAWA YOUICHI
1 patentWATANABE TAKERU
1 patentTAKEMURA KATSUYA
1 patentShowing the top 50 of 73 patents by PatentIndex Score.