Inventor · disambiguated record
Hsusheng Chang
Also filed as: CHANG HSUSHENG
8 granted patents·5 pending applications·18 citations·filing 2011–2016
79Inventor score
Top patents by PatentIndex Score
13 records- 0183US8863045B1Optical proximity correction method based on hybrid simulation modelSHANGHAI HUALI MICROELECT CORP·Filed 2013·Granted Oct 14, 2014·5 cites·6 claims
- 0281US8898598B1Layout pattern modification methodSHANGHAI HUALI MICROELECT CORP·Filed 2013·Granted Nov 25, 2014·7 cites·7 claims
- 0378US9991116B1Method for forming high aspect ratio patterning structureSHANGHAI HUALI MICROELECT CORP·Filed 2016·Granted Jun 5, 2018·3 cites·10 claims
- 0463US8645879B2Algorithm of Cu interconnect dummy insertingSHANGHAI HUALI MICROELECT CORP·Filed 2012·Granted Feb 4, 2014·2 cites·7 claims
- 0559US8900887B2Method for etching polysilicon gateSHANGHAI HUALI MICROELECT CORP·Filed 2012·Granted Dec 2, 2014·1 cites·4 claims
- 0650US9134122B2Apparatus for detecting the flatness of wafer and the method thereofSHANGHAI HUALI MICROELECT CORP·Filed 2013·Granted Sep 15, 2015·0 cites·10 claims
- 0742US2013224399A1Method of forming nitrogen-free dielectric anti-reflection layerSHANGHAI HUALI MICROELECT CORP·Filed 2012·Application pending·0 cites
- 0839US8658502B2Method for reducing morphological difference between N-doped and undoped polysilicon gates after etchingSHANGHAI HUALI MICROELECT CORP·Filed 2012·Granted Feb 25, 2014·0 cites·4 claims
- 0938US8822348B2Dummy wafer structure and method of forming the sameSHANGHAI HUALI MICROELECT CORP·Filed 2012·Granted Sep 2, 2014·0 cites·6 claims
- 1034US2015064930A1Process of manufacturing the gate oxide layerSHANGHAI HUALI MICROELECT CORP·Filed 2013·Application pending·0 cites
- 1133US2015004767A1Method of forming nickel salicide on a silicon-germanium layerSHANGHAI HUALI MICROELECT CORP·Filed 2013·Application pending·0 cites
- 1226US2013064992A1Process for Eliminating Fog Particles on a Surface of High P Concentration PSG FilmGU MEIMEI·Filed 2011·Application pending·0 cites
- 1323US2014099783A1Method of adding an additional mask in the ion-implantation processSHANGAI HUALI MICROELECTRONICS CORP·Filed 2013·Application pending·0 cites
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