Inventor

KOVAL RANDY J

US19 patents

⚠️ This page may combine multiple inventors who share the name “KOVAL RANDY J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KOVAL RANDY J

MICRON TECHNOLOGY INC

Semiconductor devices and methods of fabrication

Semiconductor devices and methods of fabrication

Semiconductor devices and methods of fabrication

Methods and apparatuses including an asymmetric assist device

Methods and apparatuses including an asymmetric assist device

Methods and apparatuses including an asymmetric assist device

Semiconductor devices and methods of fabrication

Methods and apparatuses including an asymmetric assist device

Methods of forming a portion of a memory array having a conductor having a variable concentration of germanium

INTEL CORP

Self-aligned floating gate in a vertical memory structure

Self-aligned floating gate in a vertical memory structure

Self-aligned floating gate in a vertical memory structure

Local buried channel dielectric for vertical NAND performance enhancement and vertical scaling

Non-volatile memory with storage nodes having a radius of curvature

Self-aligned floating gate in a vertical memory structure

Vertical memory having varying storage cell design through the storage cell stack

Local buried channel dielectric for vertical NAND performance enhancement and vertical scaling

KOVAL RANDY J

Conductors having a variable concentration of germanium for governing removal rates of the conductor during control gate formation

Use of etch process post wordline definition to improve data retention in a flash memory device