Inventor

SIMSEK-EGE FATMA A

US7 patents

⚠️ This page may combine multiple inventors who share the name “SIMSEK-EGE FATMA A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INTEL CORP

6 patents

US9595531B2Mar 14, 2017

Aluminum oxide landing layer for conductive channels for a three dimensional circuit device

INTEL CORP12 citations83

US10141322B2Nov 27, 2018

Metal floating gate composite 3D NAND memory devices and associated methods

INTEL CORP7 citations82

US9190490B2Nov 17, 2015

Local buried channel dielectric for vertical NAND performance enhancement and vertical scaling

INTEL CORP7 citations82

US9478643B2Oct 25, 2016

Memory structure with self-aligned floating and control gates and associated methods

INTEL CORP3 citations72

US9722074B2Aug 1, 2017

Local buried channel dielectric for vertical NAND performance enhancement and vertical scaling

INTEL CORP4 citations71

US10002767B2Jun 19, 2018

Aluminum oxide landing layer for conductive channels for a three dimensional circuit device

INTEL CORP1 citations51

SIMSEK-EGE FATMA A

1 patent

US8969948B2Mar 3, 2015

Tungsten salicide gate source for vertical NAND string to control on current and cell pillar fabrication

SIMSEK-EGE FATMA A12 citations79